2012 Fiscal Year Final Research Report
Next generation mesoplasma SIEMENS technology for direct production of wafer-equivalent thin film solar cells
| Project/Area Number |
21226017
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| Research Category |
Grant-in-Aid for Scientific Research (S)
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| Allocation Type | Single-year Grants |
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| Research Field |
Material processing/treatments
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| Research Institution | The University of Tokyo |
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Principal Investigator |
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| Co-Investigator(Kenkyū-buntansha) |
KAMBARA Makoto 東京大学, 大学院・工学系研究科, 准教授 (80359661)
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| Co-Investigator(Renkei-kenkyūsha) |
TANAKA Yasunori 金沢大学, 工学部, 教授 (90303263)
SHIBUTA Yasushi 東京大学, 大学院・工学系研究科, 講師 (90401124)
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| Project Period (FY) |
2009 – 2012
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| Keywords | メゾプラズマ / シリコン / エピタキシャル成長 / 太陽電池 / シーメンス法 |
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| Research Abstract |
This project aims at the development of next generation mesoplasma SIEMENS technology for direct production of wafer-equivalent thin film solar cells. Special attentions were paid to understanding the mechanisms of the nano-cluster assisted fast rate epitaxy and also to an in-situ measurement of the absolute density of the excited atomic hydrogen, both of which are the core of the mesoplasma, together with the technological development of the cost effective production system. Based on these knowledge and understandings, we have proved the unique characteristics of mesoplasma CVD by demonstrating the ultrafast epitaxial deposition with high material yields that exceeds beyond the kinetics limit of the SIEMENS technology.
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