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2011 Fiscal Year Final Research Report

Applications of nanosiicon ballistic emitter in liquids, gases, and solids

Research Project

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Project/Area Number 21241037
Research Category

Grant-in-Aid for Scientific Research (A)

Allocation TypeSingle-year Grants
Section一般
Research Field Microdevices/Nanodevices
Research InstitutionTokyo University of Agriculture and Technology

Principal Investigator

KOSHIDA Nobuyoshi  東京農工大学, 大学院・工学府, 特任教授 (50143631)

Co-Investigator(Kenkyū-buntansha) BERNARD Gollez  名古屋大学, 大学院・工学研究科, 特任准教授 (40343157)
Project Period (FY) 2009 – 2011
Keywordsナノシリコン / 量子閉じ込め / 多重トンネル / 弾道雷子 / 還元効果 / 真空紫外光発生 / 光キャリア増倍
Research Abstract

The characteristic functions and their possible applications of nanosilicon ballistic electron emitter were clarified in liquids, gases, and solids.
(1) Operation in liquids : Injection of highly reducing electrons into solutions induces thin film deposition of semiconductors(silicon and germanium) and metals.
(2) Operation in gases : It was confirmed that internal electronic excitation of Xe molecules emits vacuum-ultraviolet light without discharging.
(3) Operation in solids : The underlying physics of avalanche photoconduction observed in nanosilicon diode was made clear by theoretical analyses of ballistic effect.

  • Research Products

    (69 results)

All 2012 2011 2010 2009 Other

All Journal Article (24 results) (of which Peer Reviewed: 24 results) Presentation (39 results) Book (3 results) Remarks (2 results) Patent(Industrial Property Rights) (1 results) (of which Overseas: 1 results)

  • [Journal Article] Ballistic electron emission from quantum-sized nanosilicon diode and its applications2011

    • Author(s)
      N. Koshida, T. Ohta, B. Gelloz, and A Kojima
    • Journal Title

      Current Opinion in Solid State and Mater. Sci

      Volume: 15 Pages: 183-187

    • DOI

      DOI:10.1016/j.cossms.2011.04.003

    • Peer Reviewed
  • [Journal Article] Theory of quasi-ballistic transport through nanocrystalline silicon dots2011

    • Author(s)
      N. Mori, H. Minari, S. Uno, H. Mizuta, and N. Koshida
    • Journal Title

      Appl. Phys. Lett

      Volume: 98 Pages: 062104

    • DOI

      DOI:10.1063/1.3553501

    • Peer Reviewed
  • [Journal Article] Multilayered thin metal films deposition by sequential operation of nanosilicon electron emitter in metal-salt solution2011

    • Author(s)
      T. Ohta, B. Gelloz, and N. Koshida
    • Journal Title

      Jpn. J. Appl. Phys

      Volume: 50 Pages: 06GG03/1-4

    • DOI

      DOI:10.1143/JJAP.50.06GG03

    • Peer Reviewed
  • [Journal Article] Counter-electrode-free thin Cu film deposition based on ballistic electron injection into CuSO_4 solution from nanosilicon emitter2011

    • Author(s)
      T. Ohta, B. Gelloz, and N. Koshida
    • Journal Title

      Jpn. J. Appl. Phys

      Volume: 50 Pages: 010104/1-4

    • DOI

      DOI:10.1143/JJAP.50.010104

    • Peer Reviewed
  • [Journal Article] Functional device applications of nanosilicon2011

    • Author(s)
      N. Koshida, T. Ohta, Y. Hirano, R. Mentek, and B. Gelloz
    • Journal Title

      Key Engineering Materials

      Volume: 470 Pages: 20-16

    • DOI

      DOI:10.4028/www.scientific.net/KEM.470.20

    • Peer Reviewed
  • [Journal Article] Energy transfer from phosphorescent blue-emitting oxidized porous silicon to rhodamine 1102010

    • Author(s)
      B. Gelloz, N. Harima, H. Koyama, H. Elhouichet, and N. Koshida
    • Journal Title

      Appl. Phys. Lett

      Volume: 97 Pages: 171107

    • DOI

      DOI:10.1063/1.3511740

    • Peer Reviewed
  • [Journal Article] Electropolymerization of poly vinylene films onto and inside porous Si layers of different types and morphologies2010

    • Author(s)
      B. Gelloz, M. Mentek, T. Djenizian, F. Dumur, L. Jin, and N. Koshida
    • Journal Title

      J. Electrochem. Soc

      Volume: 157(12) Pages: 648-655

    • DOI

      DOI:10.1149/1.3497359

    • Peer Reviewed
  • [Journal Article] Reduction of surface recombination and enhancement of light emission in silicon photonic crystals treated by high-pressure water vapor annealing2010

    • Author(s)
      M. Fujita, B. Gelloz, N. Koshida, and S. Noda
    • Journal Title

      Appl. Phys. Lett

      Volume: 97 Pages: 121111/1-3

    • DOI

      DOI:10.1063/1.3489419

    • Peer Reviewed
  • [Journal Article] Thin Cu film deposition by operation of nanosilicon ballistic electron emitter in solution2010

    • Author(s)
      T. Ohta, B. Gelloz, and N. Koshida
    • Journal Title

      Electrochem. Solid-State Lett

      Volume: 13 Pages: 73-75

    • DOI

      DOI:10.1149/1.3463815

    • Peer Reviewed
  • [Journal Article] Stabilization and operation of porous silicon photonic structures from near-ultraviolet to near-infrared using high-pressure water vapor annealing2010

    • Author(s)
      B. Gelloz and N. Koshida
    • Journal Title

      Thin Solid Films

      Volume: 518(12) Pages: 3276-3279

    • DOI

      DOI:10.1016/j.tsf.2009.08.043

    • Peer Reviewed
  • [Journal Article] Fabrication and optical characterization of self-standing wide-gap nanocrystalline silicon layers2010

    • Author(s)
      R. Mentek, B. Gelloz, and N. Koshida
    • Journal Title

      Jpn. J. Appl. Phys

      Volume: 49 Pages: 04DG22-1-04DG22-3

    • DOI

      DOI:10.1143/JJAP.49.04DG22

    • Peer Reviewed
  • [Journal Article] 2/3-inch ultra-high-sensitivity image sensor with active-matrix high-efficiency electron emission device2010

    • Author(s)
      T. Nakada, T. Sato, Y. Matsuba, K. Sakemura, Y. Okuda, N. Negishi, A. Watanabe, T. Yoshikawa, K. Ogasawara, M. Nanba, K. Tanioka, N. Egami, A. Kobayashi, and N. Koshida
    • Journal Title

      J. Vac. Sci. Technol. B

      Volume: 28 Pages: C2D11-15

    • DOI

      DOI:10.1116/1.3271163

    • Peer Reviewed
  • [Journal Article] Development of dry-processed silicon nano-dot planar cold cathode and its electron emission properties2010

    • Author(s)
      Y. Hirano, M. Nanba, N. Egami, S. Yamazaki, and N. Koshida
    • Journal Title

      J. Vac. Sci. Technol. B

      Volume: 28 Pages: C2B6-C2810

    • DOI

      DOI:10.1116/1.3275746

    • Peer Reviewed
  • [Journal Article] Direct Electropolymerization of polyvinylene films on Si and porous Si2010

    • Author(s)
      T. Djenizian, B. Gelloz, F. Dumur, C. Chassigneux, L. Jin, and N. Koshida
    • Journal Title

      J. Electrochem. Soc

      Volume: 157(5) Pages: 534-539

    • DOI

      DOI:10.1149/1.3355855

    • Peer Reviewed
  • [Journal Article] Direct excitation of xenon by ballistic electrons emitted from nanocrystalline silicon planar cathode and vacuum-ultraviolet light emission2010

    • Author(s)
      T. Ichihara, T. Hatai, and N. Koshida
    • Journal Title

      J. Soc. Information Display

      Volume: 18(3) Pages: 223-227

    • DOI

      DOI:10.1889/JSID18.3.223

    • Peer Reviewed
  • [Journal Article] Multiple energy transfer in porous silicon/Rh6G/RhB nanocomposite evidenced by photoluminescence and its polarization memory2010

    • Author(s)
      A. Chouket, H. Elhouichet, H. Koyama, B. Gelloz, M. Oueslati, and N. Koshida
    • Journal Title

      Thin Solid Films

      Volume: 518 Pages: 212-216

    • DOI

      DOI:10.1016/j.tsf.2009.10.091

    • Peer Reviewed
  • [Journal Article] Avalanche multiplication of photo-carriers in nanometer-sized silicon dot layers2009

    • Author(s)
      Y. Hirano, K. Okamoto, S. Yamazaki, and N. Koshida
    • Journal Title

      Appl. Phys. Lett

      Volume: 95 Pages: 063109

    • DOI

      DOI:10.1063/1.3205119

    • Peer Reviewed
  • [Journal Article] Effect of high-pressure water-vapor annealing on energy transfer in dye-impregnated porous silicon2009

    • Author(s)
      A. Chouket, B. Gelloz, H. Koyama, H. Elhouichetl, M. Oueslatil, and N. Koshida
    • Journal Title

      J. Luminescence

      Volume: 129 Pages: 1332-1335

    • DOI

      DOI:10.1016/j.jlumin.2009.06.021

    • Peer Reviewed
  • [Journal Article] Long-lived blue phosphorescence of oxidized and annealed nanocrystalline silicon2009

    • Author(s)
      B. Gelloz and N. Koshida
    • Journal Title

      Appl. Phys. Lett

      Volume: 94 Pages: 201903-05

    • DOI

      DOI:10.1063/1.3140570

    • Peer Reviewed
  • [Journal Article] Enhanced output current density of an active-matrix high-efficiency electron emission device(HEED) array with 13. 75μm pixels2009

    • Author(s)
      T. Nakada, T. Sato, Y. Matsuba, R. Tanaka, K. Sakemura, N. Negishi, Y. Okuda, A. Watanabe, T. Yoshikawa, K. Ogasawara, M. Nanba, K. Tanioka, N. Egami, and N. Koshida
    • Journal Title

      J. Vac. Sci. Technol. B

      Volume: 27 Pages: 735-739

    • DOI

      DOI:10.1116/1.3079653

    • Peer Reviewed
  • [Journal Article] Specific blue light emission from nanocrystalline porous Si treated by high pressure water vapor annealing2009

    • Author(s)
      B. Gelloz, R. Mentek, and N. Koshida
    • Journal Title

      Jpn. J. Appl. Phys

      Volume: 48 Pages: 04C119-1-5

    • DOI

      DOI:10.1143/JJAP.48.04C119

    • Peer Reviewed
  • [Journal Article] Vacuum-ultraviolet light emission from xenon directly excited by ballistic output electrons of nanocrystalline silicon planar cathode2009

    • Author(s)
      T. Ichihara, T. Hatai, and N. Koshida
    • Journal Title

      J. Vac. Sci. Technol. B

      Volume: 27 Pages: 772-774

    • DOI

      DOI:10.1116/1.3070655

    • Peer Reviewed
  • [Journal Article] Quasi-ballistic electron transport through silicon nanocrystals2009

    • Author(s)
      N. Mori, H. Minari, S. Uno, H. Mizuta, and N. Koshida
    • Journal Title

      J. Phys. Conf. Ser

      Volume: 193 Pages: 012008-012011

    • DOI

      DOI:10.1088/1742-6596/193/1/012008

    • Peer Reviewed
  • [Journal Article] ナノ結晶シリコン電子源の新しい応用展開2009

    • Author(s)
      越田信義
    • Journal Title

      応用物理

      Volume: 78 Pages: 329-332

    • URL

      http://www.jsap.or.jp/ap/2009/ob7804/p780329.html

    • Peer Reviewed
  • [Presentation] Porous Silicon : electronic and optoelectronic applications(招待講演)2012

    • Author(s)
      N. Koshida
    • Organizer
      Int. Conf. Porous Semiconductors Science and Technology
    • Place of Presentation
      Malaga, Spain
    • Year and Date
      2012-03-25
  • [Presentation] ナノシリコン弾道電子源の還元効果による半導体薄膜堆積2012

    • Author(s)
      太田敢行,越田信義
    • Organizer
      応用物理学会
    • Place of Presentation
      早稲田大、東京
    • Year and Date
      2012-03-17
  • [Presentation] 乱れたシリコンナノドットにおけるインパクトイオン化率2012

    • Author(s)
      森伸也,富田将典,三成英樹,渡邉孝信,越田信義
    • Organizer
      応用物理学会
    • Place of Presentation
      早稲田大、東京都
    • Year and Date
      2012-03-16
  • [Presentation] Thin film deposition by operation of nanosilicon ballistic electron emitter in solutions(招待講演)2011

    • Author(s)
      N. Koshida, T. Ohta, H. Yoshimura, R. Mentek, and B. Gelloz
    • Organizer
      International Conference on Thin Films
    • Place of Presentation
      京都テルサ、京都
    • Year and Date
      2011-11-08
  • [Presentation] Thin semiconductor film deposition based on electron injection into solutions from nanosilicon ballistic emitter2011

    • Author(s)
      T. Ohta, H. Yoshimura, B. Gelloz, and N. Koshida
    • Organizer
      Int. Microprocesses and Nanotechnology Conf.
    • Place of Presentation
      ANAホテル、京都
    • Year and Date
      2011-10-27
  • [Presentation] Electronic, and acoustic applications of nanosilicon(招待講演)2011

    • Author(s)
      N. Koshida
    • Organizer
      Int. Conf. on Nano-Science & Technology
    • Place of Presentation
      Dalian, China
    • Year and Date
      2011-10-24
  • [Presentation] Thin silicon film deposition by unilateral electroreduction at the surface of nanosilicon ballistic electron emitter2011

    • Author(s)
      T. Ohta, H. Yoshimura, B. Gelloz, and N. Koshida
    • Organizer
      Electrochemical Society Meeting Int.
    • Place of Presentation
      Boston, USA
    • Year and Date
      2011-10-12
  • [Presentation] Blue and red luminescence bands in oxidized porous Si and effect of external electric field2011

    • Author(s)
      B. Gelloz, K. Nishikawa, and N. Koshida
    • Organizer
      Int. Symp. Electrochem. Soc. Meeting
    • Place of Presentation
      Boston, USA
    • Year and Date
      2011-10-11
  • [Presentation] Strain effects on avalanche multiplication in a silicon nanodot array2011

    • Author(s)
      N. Mori, H. Minari, S. Uno, H. Mizuta, and N. Koshida
    • Organizer
      Int. Conf. on Solid State Devices and Materials
    • Place of Presentation
      愛知県産業労働センター、愛知県
    • Year and Date
      2011-09-29
  • [Presentation] Technological potential of nanosilicon for post-scaling phase(招待講演)2011

    • Author(s)
      N. Koshida
    • Organizer
      Int. Symposium and Summer School : Nano and Giga Challenges in Electronics
    • Place of Presentation
      Moscow, Russia
    • Year and Date
      2011-09-13
  • [Presentation] ナノシリコン列における光励起キャリアの雪崩増倍2011

    • Author(s)
      森伸也,三成英樹,宇野重康,水田博,越田信義
    • Organizer
      応用物理学会
    • Place of Presentation
      山形大、山形県
    • Year and Date
      2011-09-02
  • [Presentation] Thin silicon film deposition by operation of nanosilicon electron emitter in SiCl4 solution2011

    • Author(s)
      T. Ohta, B. Gelloz, N. Koshida
    • Organizer
      Int. Conf. on Si Epitaxy and Heterostructures
    • Place of Presentation
      Leuven, Belgium
    • Year and Date
      2011-08-30
  • [Presentation] Impact ionization and avalanche multiplication in a silicon nanodot array2011

    • Author(s)
      N. Mori, H. Minari, S. Uno, H. Mizuta, and N. Koshida
    • Organizer
      Int. Conf. Electron Dynamics in Semiconductors Optoelectronics, and Nanostructures
    • Place of Presentation
      Santa Barbara, USA
    • Year and Date
      2011-08-10
  • [Presentation] Properties and applications of nanosilicon as a functional material(招待講演)2011

    • Author(s)
      N. Koshida
    • Organizer
      Int. Symp. on Functional Materials
    • Place of Presentation
      東北大、宮城県
    • Year and Date
      2011-08-03
  • [Presentation] シリコンナノ構造のセンサー応用(招待講演)2011

    • Author(s)
      越田信義
    • Organizer
      電子情報通信学会シリコン・フォトニクス研究会
    • Place of Presentation
      東工大、東京
    • Year and Date
      2011-07-19
  • [Presentation] Multi-functionality of quantum-sized nanosilicon(招待講演)2011

    • Author(s)
      N. Koshida, T. Ohta, R. Mentek, and B. Gelloz
    • Organizer
      Collaborative Conference on 3D Materials Research
    • Place of Presentation
      Jeju, Korea
    • Year and Date
      2011-06-28
  • [Presentation] Photonic, electronic, and acoustic applications of nanosilicon(招待講演)2011

    • Author(s)
      N. Koshida, T. Ohta, Y. Hirano, R. Mentek, and B. Gelloz
    • Organizer
      Nano Meeting 2011 : Physics, Chemistry and Application of Nanostructures
    • Place of Presentation
      Minsk, Belarus
    • Year and Date
      2011-05-27
  • [Presentation] 弾道電子源の還元効果による湿式シリコン薄膜堆積2011

    • Author(s)
      太田敢行, B. Gelloz,越田信義
    • Organizer
      応用物理学会
    • Place of Presentation
      神奈川工科大学,厚木市
    • Year and Date
      2011-03-25
  • [Presentation] Fast and large field electron beam exposure by CSEL2011

    • Author(s)
      A. Kojima, H. Ohyi, T. Ohta, and N. Koshida
    • Organizer
      SPIE Int. Conf. on Advanced Lithography
    • Place of Presentation
      San Jose, USA
    • Year and Date
      2011-03-02
  • [Presentation] Photonic, electronic, and acoustic applications of nanosilicon(招待講演)2010

    • Author(s)
      N. Koshida, T. Ohta, R. Mentek, Y. Hirano, and B. Gelloz
    • Organizer
      Int. Conf. Micro-Nanoelectronics, Nanotechnologies & MEMs
    • Place of Presentation
      Athens, Greece
    • Year and Date
      2010-12-13
  • [Presentation] Characteristics and functions of the blue phosphorescence of nanocrystalline porous silicon2010

    • Author(s)
      B. Gelloz, K. Nishikawa, and N. Koshida
    • Organizer
      Materials Research Society 2010 Fall Meeting
    • Place of Presentation
      Boston, USA
    • Year and Date
      2010-12-02
  • [Presentation] Multilayered thin metal films deposition by sequential operation of nanosilicon electron emitter in metal-salt solution2010

    • Author(s)
      T. Ohta, B. Gelloz, and N. Koshida
    • Organizer
      Int. Microprocesses and Nanotechnology Conf.
    • Place of Presentation
      リーガロイヤルホテル,北九州市
    • Year and Date
      2010-11-11
  • [Presentation] Photonic and Related Functions of Nanosilicon(招待講演)2010

    • Author(s)
      N. Koshida, T. Ohta, R. Mentek, Y. Hirano, and B. Gelloz
    • Organizer
      German-Japan Seminar
    • Place of Presentation
      Ilmenau, Germany
    • Year and Date
      2010-09-27
  • [Presentation] Optical and photoelectrical characterizations of wide-gap nanocrystalline silicon layers2010

    • Author(s)
      R. Mentek, B. Gelloz, M. Kawabata, and N. Koshida
    • Organizer
      Int. Conf. on Solid State Devices and Materials
    • Place of Presentation
      東京大,東京
    • Year and Date
      2010-09-22
  • [Presentation] ナノシリコン弾道電子エミッタの金属塩溶液中動作による薄膜堆積2010

    • Author(s)
      太田敢行、B. Gelloz、越田信義
    • Organizer
      応用物理学会
    • Place of Presentation
      長崎大,長崎市
    • Year and Date
      2010-09-15
  • [Presentation] ワイドギャップナノ結晶シリコン層の光電特性2010

    • Author(s)
      R. Mentek, B. Gelloz,川端茉莉,越田信義
    • Organizer
      応用物理学会
    • Place of Presentation
      長崎大,長崎市
    • Year and Date
      2010-09-15
  • [Presentation] Photonic and related applications of quantum-sized nanosilicon(招待講演)2010

    • Author(s)
      N. Koshida, T. Ohta, R. Mentek, and B. Gelloz
    • Organizer
      Int. Conf. on Optical, Optoelectronic and Photonic Materials and Applications
    • Place of Presentation
      Budapest, Hungary
    • Year and Date
      2010-08-17
  • [Presentation] Properties of quantum-sized nanosilicon as a functional photonic material(Invited)2010

    • Author(s)
      N. Koshida, B. Gelloz, R. Mentek, H. Yoshimura, and Y. Hirano
    • Organizer
      Material Research Society Int. Symp.
    • Place of Presentation
      San Francisco, USA
    • Year and Date
      2010-04-07
  • [Presentation] ナノシリコン弾道電子源の溶液中動作によるCu薄膜堆積2010

    • Author(s)
      太田敢行、B. Gelloz、越田信義
    • Organizer
      第57回応用物理学会関係連合会
    • Place of Presentation
      東海大、神奈川県
    • Year and Date
      2010-03-17
  • [Presentation] Functional properties of nanosilicon ballistic electron emitter in vacuum2010

    • Author(s)
      T. Ohta, B. Gelloz, and N. Koshida
    • Organizer
      atmospheric-pressure gases, and solutions, Int. Conf. On Porous Semiconductors Science and Technology
    • Place of Presentation
      Valencia, Spain
    • Year and Date
      2010-03-16
  • [Presentation] Nanosilicon for advanced more-than-moore applications(招待講演)2010

    • Author(s)
      N. Koshida
    • Organizer
      Int. Symp. on Atom-Scale Silicon Hybrid Nanotechnologies for' More-than-Moore' & ' Beyond CMOS' Era
    • Place of Presentation
      Southampton, UK
    • Year and Date
      2010-03-02
  • [Presentation] Surface electron emission lithography system based on a planar type Si nanowire array ballistic electron source2010

    • Author(s)
      A. Kojima, T. Ohta, H. Ohi, and N. Koshida
    • Organizer
      SPIE Int. Meeting on Advanced Lithography
    • Place of Presentation
      San Jose, USA
    • Year and Date
      2010-02-28
  • [Presentation] Fabrication and optical characterization of self-standing wide-gap nanocrystalline silicon layers2009

    • Author(s)
      R. Mentek, B. Gelloz, and N. Koshida
    • Organizer
      Int. Conf. Solid State Devices and Mater.
    • Place of Presentation
      Sendai, Japan
    • Year and Date
      2009-10-08
  • [Presentation] Structural and optical properties of electropolymerized poly(paraphenylene) vinylene films on Si and porous Si2009

    • Author(s)
      T. Djenizian, B. Gelloz, F. Dumur, C. Chassigneux, and N. Koshida
    • Organizer
      ECS 2009 Int. Symp.
    • Place of Presentation
      Wien, Austria
    • Year and Date
      2009-10-06
  • [Presentation] ナノシリコン技術の可能性(招待講演)2009

    • Author(s)
      越田信義
    • Organizer
      日本学術振興会第136委員会研究会
    • Place of Presentation
      弘済会館、東京
    • Year and Date
      2009-09-14
  • [Presentation] Quasi-ballistic electron transport through silicon nanocrystals2009

    • Author(s)
      N. Mori, H. Minari, S. Uno, H. Mizuta, and N Koshida
    • Organizer
      Int. Conf. on Electron Dynamics In Semiconductors
    • Place of Presentation
      Montpellier, France
    • Year and Date
      2009-08-24
  • [Presentation] Illumination effects on the characteristics of nanosilicon ballistic electron emitter as an active electrode2009

    • Author(s)
      T. Ohta, S. Ogawa, B. Gelloz, and N. Koshida
    • Organizer
      Int. Vac. Nanoelectronics Conf.
    • Place of Presentation
      Hamamatsu, Japan
    • Year and Date
      2009-07-24
  • [Presentation] 2/3-inch ultra-high sensitivity image sensor with active-matrix high-efficiency electron emitter array2009

    • Author(s)
      T. Nakada T. Sato, Y. Matsuba, K. Sakemura, Y. Okuda, N. Negishi, A. Watanabe, T. Yoshikawa, K. Ogasawara, M. Nanba, K. Tanioka, N. Egami, A. Kobayashi, and N. Koshida
    • Organizer
      Int. Vac. Nanoelectronics Conf.
    • Place of Presentation
      Hamamatsu, Japan
    • Year and Date
      2009-07-24
  • [Presentation] Operation of nanosilicon ballistic electron emitter in aqueous solutions as an active electrode(招待講演)2009

    • Author(s)
      N. Koshida
    • Organizer
      5th Kurt Schwabe Int. Symp.
    • Place of Presentation
      Erlangen, Germany
    • Year and Date
      2009-05-25
  • [Book] Photonic, Electronic, and Acoustic Applications of Physics, Chemistry and Application of Nanostructures2011

    • Author(s)
      N. Koshida, T. Ohta, Y. Hirano, R. Mentek, and B. Gelloz
    • Total Pages
      11-18
    • Publisher
      World Scientific Publishing
  • [Book] ナノシリコンの最新技術と応用展開2010

    • Author(s)
      越田信義(監修)
    • Total Pages
      245
    • Publisher
      シーエムシー出版
  • [Book] Device Applications of Silicon Nanocrystals and Nanostructures2009

    • Author(s)
      N. Koshida
    • Total Pages
      348
    • Publisher
      Springer
  • [Remarks] 日本経済新聞(2009年11月21日)朝刊のコラム「技術ウォッチ」で、"ナノシリコンを電子部品に"として本研究が紹介された。新聞報道

  • [Remarks] 以下の研究室ホームページで研究内容と成果を公開

    • URL

      http://www.tuat.ac.jp/~koslab/

  • [Patent(Industrial Property Rights)] 電子源電極を用いた固体薄膜の形成方法2010

    • Inventor(s)
      越田信義、太田敢行
    • Industrial Property Rights Holder
      東京農工大学
    • Industrial Property Number
      特許、特願2010-21463
    • Filing Date
      2010-02-02
    • Overseas

URL: 

Published: 2013-07-31  

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