2011 Fiscal Year Final Research Report
Graphene atomic film transistor with gate-tunable band-gap
| Project/Area Number |
21241038
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| Research Category |
Grant-in-Aid for Scientific Research (A)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Microdevices/Nanodevices
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| Research Institution | National Institute for Materials Science |
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Principal Investigator |
TSUKAGOSHI Kazuhito 独立行政法人物質・材料研究機構, 国際ナノアーキテクトニクス研究拠点, 主任研究者 (50322665)
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| Project Period (FY) |
2009 – 2011
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| Keywords | グラフェン / 電気伝導 / 電界効果 / 基礎物性 / 自己形成 |
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| Research Abstract |
We have realized a practical wide band gap in bilayer graphene. The gap was induced by an electric field applied by dual-gate sandwiching the bilayer graphene. A self-assembled gate insulator enabled us to apply a large electric field which enhanced the band gap. The wide band gap allowed for operation of a logic gate composed of bilayer graphene transistors. These results predict that graphene electronics will possibly be realized as emerging transistors with an atomically thin semiconductor.
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Research Products
(62 results)
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[Presentation] Bilayer graphene2010
Author(s)
K. Tsukagoshi
Organizer
The 6th International Nanotechnology Conference on Communications and Cooperation(INC6)
Place of Presentation
Minatec, Grenoble, France
Year and Date
20100517-20
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