2011 Fiscal Year Final Research Report
Fabrication of perpendicular magnetized tunnel junction and magnetization reversal by spin injection
| Project/Area Number |
21246001
|
|---|
| Research Category |
Grant-in-Aid for Scientific Research (A)
|
| Allocation Type | Single-year Grants |
|---|
| Section | 一般 |
|---|
| Research Field |
Applied materials science/Crystal engineering
|
|---|
| Research Institution | Tohoku University |
|---|
Principal Investigator |
MIYAZAKI Terunobu 東北大学, 原子分子材料科学高等研究機構, 教授 (60101151)
|
|---|
| Co-Investigator(Kenkyū-buntansha) |
MIZUKAMI Shigemi 東北大学, 原子分子材料科学高等研究機構, 准教授 (00339269)
OOGANE Mikihiko 東北大学, 工学研究科, 准教授 (50396454)
|
|---|
| Project Period (FY) |
2009 – 2011
|
| Keywords | スピントロニクス / 磁気メモリ / トンネル接合 / TMR比 |
|---|
| Research Abstract |
In order to develop a memory cell material which is applicable to high density magnetic random access memory (MRAM), the composition dependence on saturation magnetization Ms, perpendicular magnetic anisotropy constant Ku and Gilbert damping constant . have been investigated in epitaxial Mn_xGa_<1-x> (0. 5≦x≦0. 75)alloy films. The M_s values decrease linearly from approximately 600 to 200 emu/cc with increasing x, where as the K_u values decrease slightly from 15 to 10 Merg/cc with increasing x. The damping constant . is 0. 08 (0. 015)for Mn_<1. 54> Ga (Mn_<2. 12> Ga)film. These magnetic properties satisfy the requirement for memory cell.
Furthermore, by using Mn-Ga alloy films as the electrode of tunnel junction, we investigated the magnetoresistance ratio at 10 K and 300 K. With an insertion of Fe (Co)between Mn-Ga electrode and tunnel barrier the maximum TMR value up to 60 (40)%is obtained at room temperature. An increase of TMR value is necessary for MRAM memory cell.
|
-
-
-
-
[Journal Article] Long-Lived Ultrafast Spin Precessionin Manganese Alloys Films with a LargePerpendicular Magnetic Anisotropy2011
Author(s)
S. Mizukami, F. Wu, A. Sakuma, J. Walowski, D. Watanabe, T. Kubota, X. Zhang, H. Naganuma, M. Oogane, Y. Ando, and T. Miyazaki
-
Journal Title
Rev. Lett
Volume: 106
Pages: 117201
Peer Reviewed
-
-
[Journal Article] Magnetoresistance Effect in Tunnel . Junctions with, Perpendicularly, Magnetized D0_<22>-Mn_<3-δ> Ga Electrode and MgO Barrier2011
Author(s)
T. Kubota, Y. Miura, D. Watanabe, S. Mizukami, F. Wu, H. Naganuma, X. Zhang, M. Oogane, M. Shirai, Y. Ando, and T. Miyazaki
-
Journal Title
Appl. Phys. Express
Volume: 4
Pages: 043002
Peer Reviewed
-
-
-
-
-
-
-
-
-
[Presentation] Heusler alloy electrode tunnel junction2010
Author(s)
Terunobu Miyazaki, Daisuke Watanabe, Shigemi Mizukami and Feng Wu, Takahide Kubota, Sumito Tsunegi, Hiroshi Nagahama, Mikihiko Oogane and Yasuo Ando
Organizer
German Physical Society
Place of Presentation
Regensburg
Year and Date
2010-03-22
-
-
-
-
