InNおよび関連混晶によるヘテロ・ナノ構造・物性の制御とバンドエンジニアリング

2010 Fiscal Year Annual Research Report

• Project/Area Number: 21246004
• Research Institution: Ritsumeikan University
• Principal Investigator: 名西 やす之 立命館大学, 理工学部, 教授 (40268157)
• Keywords: 窒化インジウム / 分子線エピタキシー法 / p型ドーピング / MIS構造 / ウェットエッチング / KOH / DERI法

Research Abstract

DERI法を基盤とした高品質結晶成長技術により作製した各種InN結晶を用いて、InN系窒化物半導体を用いたデバイス実現への基盤技術開発、基礎物性評価を進めた。
(1) InN系デバイス実現の重要課題であるp型ドーピングに関して、DERI法の効果を調べるため、2種類の方法でMgドーピングを行った。(1)N^*のみを照射するDEP時にMgドーピングを行った試料では、Thermopowerによって正のSeebeck係数が得られp型伝導が確認されたが、(2)Inを照射するMRGP時にMgドーピングを行った試料ではp型伝導を示さなかった。これらの原因をTEM、EDX、SIMSなどを用いて調べた結果、(2)の方法で成長した領域においてはMg濃度に揺らぎが確認され、DERI法のDEPとMRGPにおけるMg取込過程の解明に重要な知見が得られた。
(2) ゲート構造を持つ電子デバイス実現に向けて、N極性InN及びIn極性InNに対してMIS構造を作製し評価を行った。オーミック電極およびゲート電極にはそれぞれTi/Al/Ti/Au、Ni/Auを堆積し、絶縁膜にはSiO_2を用いた。I-V特性を評価した結果、順方向電流はN極性InNを用いた構造ではIn極性InNを用いた構造に比べて小さく、N極性InNの方がより大きなSiO_2の障壁効果が得られた。
(3) デバイスプロセス基盤技術開発として、InNデバイス構造へのKOHウェットエッチングを検討した。GaNテンプレート上にDERI法で成長したIn極性InNに対して、KOH水溶液:10mol/l、溶液温度:70±2℃によるエッチングを行った。選択的にInNのみがエッチングされ、マスクを用いた異方性エッチングも可能であることを確認した。これらの結果から、InN系デバイスの素子分離などのプロセスにKOHウェットエッチングが有用であることを示した。

Research Products

• [Journal Article] Mg Doped InN and Confirmation of Free Holes in InN (2011)
  • Author(s): K.Wang, N.Miller, R.Iwamoto, T.Yamaguchi, M.A.Mayer, T.Araki, Y.Nanishi, K.M.Yu, E.E.Haller, W.Walukiewicz, J.W.Ager III
  • Journal Title: Appl.Phys.Lett. Volume: 98 Pages: 042104/1-3
  • Peer Reviewed
• [Journal Article] Growth and Fabrication of InN-based III-nitride Structure Using Droplet Elimination Process by Radical Beam Irradiation (2011)
  • Author(s): T.Yamaguchi, Y.Nanishi
  • Journal Title: Proceedings of SPIE photonic West 2011 Volume: 7939 Pages: 793904
  • Peer Reviewed
• [Journal Article] Application of Droplet Elimination Process by Radical-Beam Irradiationto InGaN Growth and Fabrication of InN/InGaN Periodic Structure (2011)
  • Author(s): T.Yamaguchi, H.Umeda, T.Ataki, Y.Nanishi
  • Journal Title: Jpn.J.Appl.Plays. Volume: 50 Pages: 04DH08(1-4)
  • Peer Reviewed
• [Journal Article] Optical Polarization Anisotropy of Nonpolar InN Epilayers (2010)
  • Author(s): K.Wang, T.Yamaguchi, A.Takeda, T.Kimura, K.Kawashima, T.Araki, Y.Nanishi
  • Journal Title: phys.stat.sol.(a) Volume: 207 Pages: 1356-1360
  • Peer Reviewed
• [Journal Article] RF-MBE Growth of InN/InGaN MQW Structures by DERI and Their Characterization (2010)
  • Author(s): T.Araki, H.Umeda, T.Yamaguchi, T.Sakamoto, E.Yoon, Y.Nanishi
  • Journal Title: Proceedings of 22nd International Conference on Indium Phosphide and Related Materials (IPRM 2010) Pages: 92-95
  • Peer Reviewed
• [Journal Article] In situ Investigation of Growth Mechanism during Molecular Beam Epitaxy of In-Polar InN (2010)
  • Author(s): K.Wang, T.Yamaguchi, T.Araki, E.Yoon, Y.Nanishi
  • Journal Title: Jpn.J.Appl.Phys. Volume: 50 Pages: 01AE02
  • Peer Reviewed
• [Journal Article] Electronic Structure of Wurtzite and Rocksalt InN Investigated by Optical Absorption under Hydrostatic Pressure (2010)
  • Author(s): J.Ibanez, A.Segura, F.J.Manjon, L.Artus, T.Yamaguchi, Y.Nanishi
  • Journal Title: Appl.Phys.Lett. Volume: 96 Pages: 201903/1-3
  • Peer Reviewed
• [Journal Article] Structural Anisotropy of Nonpolar and Semipolar InN Epitaxial Layers (2010)
  • Author(s): V.Darakchieva, M.-Y.Xie, N.Franco, F.Giuliani, B.Nunes, E.Alves, C.L.Hsiao, L.C.Chen, T.Yamaguchi, Y.Takagi, K.Kawashima, Y.Nanishi
  • Journal Title: J.Appl.Phys. Volume: 108 Pages: 073529/1-10
  • Peer Reviewed
• [Presentation] Recent Progress in Growth and Characterization of InN and Related Alloys and Those Nano-structures (2011)
  • Author(s): Y.Nanishi, T.Yamaguchi, K.Wang, T.Araki
  • Organizer: Workshop on Frontier Photonic and Electronic Materials and Devices 2011 German-Japanese-Spanish Joint Workshop
  • Place of Presentation: Granada Spain
  • Year and Date: 2011-03-17
• [Presentation] TEM Study on Microstructure of Mg-doped InN Grown by RF-MBE Using DERI Method (2011)
  • Author(s): T.Araki, T.Sakamoto, R.Iwamoto, T.Yamaguchi, E.Yoon, Y.Nanishi
  • Organizer: 3rd International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2011)
  • Place of Presentation: Nagoya Institute of Technology, Aichi Japan
  • Year and Date: 2011-03-09
• [Presentation] Development of Radical Beam Monitoring Techniques in RF-MBE Growth of InN (2011)
  • Author(s): T.Yamaguchi, T.Fujishima, T.Araki, E.Yoon, Y.Nanishi
  • Organizer: 3rd International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2011)
  • Place of Presentation: Nagoya Institute of Technology, Aichi Japan
  • Year and Date: 2011-03-07
• [Presentation] Growth and Fabrication of InN-based III-nitride Structure Using Droplet Elimination Process by Radical Beam Irradiation (2011)
  • Author(s): T.Yamaguchi, Y.Nanishi
  • Organizer: SPIE Photonic West 2011
  • Place of Presentation: San Francisco, CA USA
  • Year and Date: 2011-01-24
• [Presentation] Recent Progress in Growth and Characterization of InN and Related Alloys and Challenges for Nano-Photonics (2010)
  • Author(s): Y.Nanishi
  • Organizer: 3rd GIST Information and Mechatronics Week 2010
  • Place of Presentation: Seoul Korea
  • Year and Date: 2010-12-02
• [Presentation] 窒化物光半導体未踏領域への挑戦-InNと関連混晶の新しい成長技術と評価 (2010)
  • Author(s): 名西〓之、山口智広、王科、荒木努、Euijoon Yoon
  • Organizer: 応用物理学会九州支部学術講演会
  • Place of Presentation: 九州大学伊都キャンパス福岡県福岡市
  • Year and Date: 2010-11-27
• [Presentation] MBE法を用いたA面GaNテンプレート上A面InN選択成長 (2010)
  • Author(s): 山下修平、山口智広、荒木努、名西〓之
  • Organizer: 平成22年電気関係学会関西連合大会
  • Place of Presentation: 立命館大学キャンパス滋賀県草津市
  • Year and Date: 2010-11-14
• [Presentation] RF-MBE法を用いたr面サファイア基板上A面InN結晶高品質化に関する検討 (2010)
  • Author(s): 荒木努、川島圭介、山日智広、名西〓之
  • Organizer: 2010年度電子情報通信学会レーザ・量子エレクトロニクス研究会
  • Place of Presentation: 大阪大学中之島センター大阪府大阪市
  • Year and Date: 2010-11-11
• [Presentation] Recent Research Activities in Japan toward Nitride Semiconductor Opto-electronics Frontier (2010)
  • Author(s): Y.Nanishi
  • Organizer: Korea Optoelectronic Engineering Society
  • Place of Presentation: Seoul Korea
  • Year and Date: 2010-10-08
• [Presentation] Droplet elimination process by radical beam irradiation for the growth of InN-based III-nitrides and its application to device structure (2010)
  • Author(s): T.Yamaguchi, Y.Nanishi
  • Organizer: 2010 International Conference on Solid State Devices and Materials
  • Place of Presentation: Tokyo Univ Tokyo Japan
  • Year and Date: 2010-09-24
• [Presentation] Surface Kinetics of Indium Adlayers and Droplets and Their Roles in InN Growth by Molecular Beam Epitaxy (2010)
  • Author(s): K.Wang, T.Yamaguchi, T.Araki, Y.Nanishi
  • Organizer: The International Workshop on Nitride semiconductors (IWN2010)
  • Place of Presentation: Tampa, Florida USA
  • Year and Date: 2010-09-23
• [Presentation] Raman scattering study of the temperature dependence of phonons in InN (2010)
  • Author(s): N.Domenech-Amador, L.Artus, R.Cusco, J.Ibanez, T.Yamaguchi, Y.Nanishi
  • Organizer: The International Workshop on Nitride semiconductors (IWN2010)
  • Place of Presentation: Tampa, Florida USA
  • Year and Date: 2010-09-22
• [Presentation] Evidence of Rectification in InN pn Junctions (2010)
  • Author(s): N.Miller, J.W.Ager III, E.E.Haller, W.Walukiewicz, Ke Wang, R.Iwamoto, T.Yamaguchi, K.Kagawa, T.Araki, Y.Nanishi
  • Organizer: The International Workshop on Nitride semiconductors (IWN2010)
  • Place of Presentation: Tampa, Florida USA
  • Year and Date: 2010-09-22
• [Presentation] Free Hole Concentration and Mobility in InN : Mg (2010)
  • Author(s): N.Miller, J.W.Ager III, E.E.Haller, W_ Walukiewicz, Ke Wang, R.Iwamoto, T.Yamaguchi, K.Kagawa, T.Araki, Y.Nanishi
  • Organizer: The International Workshop on Nitride semiconductors (IWN2010)
  • Place of Presentation: Tampa, Florida USA
  • Year and Date: 2010-09-22
• [Presentation] Unintentional incorporation of hydrogen in InN : diffusion kinetics and effect of surface orientation (2010)
  • Author(s): V.Darakchieva, K.Lorenz, N.P Barradas, E.Alves, L.Artus, D.Rogala, H.-W.Becker.C.L.Hsiao, L.C.Chen, L.W.To, T.Yamaguchi, Y.Nanishi
  • Organizer: The International Workshop on Nitride semiconductors (IWN2010)
  • Place of Presentation: Tampa, Florida USA
  • Year and Date: 2010-09-22
• [Presentation] Wet Etching Process for InN Device Fabrication (2010)
  • Author(s): A.Miki, K.Morimoto, N.Maeda, T Yamaguchi, T.Araki, Y.Nanishi
  • Organizer: The International Workshop on Nitride semiconductors (IWN2010)
  • Place of Presentation: Tampa, Florida USA
  • Year and Date: 2010-09-22
• [Presentation] Dry etching of In-and N-polar InN using inductively-coupled plasma (2010)
  • Author(s): T.Fujishima, S.Takahashi, K.Morimoto, R.Iwamoto, N.Uematsu, M.Yutani, T.Yamaguchi, T.Araki, Y.Nanishi
  • Organizer: The International Workshop on Nitride semiconductors (IWN2010)
  • Place of Presentation: Tampa, Florida USA
  • Year and Date: 2010-09-22
• [Presentation] Mg doped InN and search for holes (2010)
  • Author(s): K.Wang, R.Iwamoto, T.Yamaguchi, K.Kagawa, T.Araki, Y.Nanishi, N.Miller, M.Mayer, J W Ager, K.M.Yu, W.Walukiewicz
  • Organizer: The International Workshop on Nitride semiconductors (IWN2010)
  • Place of Presentation: Tampa, Florida USA
  • Year and Date: 2010-09-22
• [Presentation] Recent Progress in Growth and Characterization of InN and Related Aloys and Challenges for Device Applications (2010)
  • Author(s): Y.Nanishi, T.Yamaguchi, K.Wang, T.Araki, M.Kaneko, E.Yoon, N.Miller, J.W.AgerIII, K.M.Yu, W.Walukiewicz
  • Organizer: The International Workshop on Nitride semiconductors (IWN2010)
  • Place of Presentation: Tampa, Florida USA
  • Year and Date: 2010-09-21
• [Presentation] TEMを用いたDERI法ドープInNの極微構造評価 (2010)
  • Author(s): 坂本努、山口智広、岩本亮輔、荒木努、名西〓之
  • Organizer: 2010年(平成22年)秋季第71回応用物理学会学術講演会
  • Place of Presentation: 長崎大学文教キャンパス長崎県長崎市
  • Year and Date: 2010-09-14
• [Presentation] DERI法を用いたInGaN成長と組成制御への試み (2010)
  • Author(s): 岩本亮輔、山口智広、上松尚、坂本努、藤嶌辰也、荒木努、名西〓之
  • Organizer: 2010年(平成22年)秋季第71回応用物理学会学術講演会
  • Place of Presentation: 長崎大学文教キャンパス長崎県長崎市
  • Year and Date: 2010-09-14
• [Presentation] InNデバイス作製プロセスへのウエットエッチングの適用 (2010)
  • Author(s): 三木彰、森本健太、前田就彦、山口智広、荒木努、名西〓之
  • Organizer: 2010年(平成22年)秋季第71回応用物理学会学術講演会
  • Place of Presentation: 長崎大学文教キャンパス長崎県長崎市
  • Year and Date: 2010-09-14
• [Presentation] DERI法InGaN成長を用いた厚膜化への試み (2010)
  • Author(s): 上松尚、山口智広、岩本亮輔、坂本努、藤嶌辰也、荒木努、名西〓之
  • Organizer: 2010年(平成22年)秋季第71回応用物理学会学術講演会
  • Place of Presentation: 長崎大学文教キャンパス長崎県長崎市
  • Year and Date: 2010-09-14
• [Presentation] Growth and Characterization of InN-Related Materials (2010)
  • Author(s): Y.Nanishi
  • Organizer: Rainbow Second Training Workshop
  • Place of Presentation: Madrid Spain
  • Year and Date: 2010-08-31
• [Presentation] InGaN Growth Using Droplet Elimination by Radical-beam Irradiation Method (2010)
  • Author(s): T.Yamaguchi, K.Wang, T.Araki, E.Yoon, Y.Nanishi
  • Organizer: 16th International Conference on Molecular Beam Epitaxy (MBE 2010)
  • Place of Presentation: Berlin Germany
  • Year and Date: 2010-08-26
• [Presentation] Potential, Present Status and Future Challenges of InN and Related Alloys for Device Applications (2010)
  • Author(s): Y.Nanishi, T.Yamaguchi, E.Yoon
  • Organizer: The second LED domestic conference
  • Place of Presentation: Seoul Korea
  • Year and Date: 2010-08-25
• [Presentation] Effect of low-temperature InN buffer on A-plane InN growth on nitridated r-plane sapphire by RF-MBE (2010)
  • Author(s): T.Araki, K.Kawashima, T.Yamaguchi, Y.Nanishi
  • Organizer: The 16th International Conference on Crystal Growth (ICCG16)
  • Place of Presentation: Beijing China
  • Year and Date: 2010-08-09
• [Presentation] High-Pressure Optical Absorption and Raman Scattering in InN Thin Films Grown by Molecular Beam Epitaxy (2010)
  • Author(s): F.J.Manjon, J.Ibanez, A.Segura, R.Cusco, L.Artus, T.Yamaguchi, Y.Nanishi
  • Organizer: 48th European High Pressure Research Group Conference (EHPRG)
  • Place of Presentation: Uppsala Sweden
  • Year and Date: 2010-07-26
• [Presentation] Forty years research toward compound semiconductor frontiers-Tributary road from GaAs to InN through GaN- (2010)
  • Author(s): Y.Nanishi
  • Organizer: 29th Electronic Materials Symposium (EMS29)
  • Place of Presentation: ラフォーレ修善寺静岡県伊豆市
  • Year and Date: 2010-07-14
• [Presentation] Wet Etching by KOH for InN Device Fabrication (2010)
  • Author(s): A.Miki, K.Morimoto, N.Maeda, T.Yamaguchi, T.Araki, Y.Nanishi
  • Organizer: 29th Electronic Materials Symposium (EM529)
  • Place of Presentation: ラフォーレ修善寺静岡県伊豆市
  • Year and Date: 2010-07-14
• [Presentation] Various Application of DERI (Droplet Elimination by Radical-beam Irradiation) Method in Growth of RF-MBE (2010)
  • Author(s): T.Yamaguchi, H.Umeda, T Sakamoto, T.Araki, E.Yoon, Y.Nanishi
  • Organizer: 29th Electronic Materials Symposium (EMS29)
  • Place of Presentation: ラフォーレ修善寺静岡県伊豆市
  • Year and Date: 2010-07-14
• [Presentation] Characterization of Contact Resistance of Ti/Al/Ti/Au Ohmic Metal on N-polar and In-polar InN Films mown by RF-MBE (2010)
  • Author(s): K.Morimoto, S.Kikuchi, N.Maeda, T.Yamaguchi, Y.Nanishi
  • Organizer: 29th Electronic Materials Symposium (EMS29)
  • Place of Presentation: ラフォーレ修善寺静岡県伊豆市
  • Year and Date: 2010-07-14
• [Presentation] Growth, Monitoring, P-type doping and MQW Structure Fabrication by DERI Method (2010)
  • Author(s): Y.Nanishi
  • Organizer: The international workshop on modern and advanced phenomena in wurtzite semiconductors
  • Place of Presentation: Montpellier France
  • Year and Date: 2010-07-09
• [Presentation] Evidence of Free Holes in Mg Doped InN (2010)
  • Author(s): K.Wang, R.Iwamoto, T.Yamaguchi, K.Kagawa, T.Araki, Y.Nanishi, N.Miller, M.Mayer, J.W.Ager, K.M.Yu, W.Walukiewicz
  • Organizer: International Symposium on Growth of III-Nitrides 2010
  • Place of Presentation: Montpellier France
  • Year and Date: 2010-07-06
• [Presentation] Investigation on InN mole fraction fluctuation in InGaN films grown by RF-MBE (2010)
  • Author(s): T.Kimura, E.Fukumoto, T.Yamaguchi, K.Wang, M.Kaneko, T.Araki, E.Yoon, Y.Nanishi
  • Organizer: International Symposium on Growth of III-Nitrides 2010
  • Place of Presentation: Montpellier France
  • Year and Date: 2010-07-06
• [Presentation] Electronic Materials Conference 2010 (EMC2010) (2010)
  • Author(s): K.Wang, R.Iwamoto, T.Yamaguchi, K.Kagawa, T.Araki, Y.Nanishi, N.Miller, M.Mayer, W.Walukiewicz
  • Organizer: Electronic Materials Conference 2010 (EMC2010)
  • Place of Presentation: Notre Dame, Indiana, USA
  • Year and Date: 2010-06-25
• [Presentation] Hydrogen in InN : Ubiquitous Phenomena in Molecular Beam Epitaxy Grown Material (2010)
  • Author(s): V.Darakchieva, K.Lorenz, N.P.Barradas, E.Alves, M.-Y.Xie, B.Monemar, M.Schubert, W.J.Schaff, C.L.Hsiao, L.C.Chen, L.W.To, T.Yamaguchi, Y.Nanishi
  • Organizer: CIMTEC2010 (5th Forum on New Materials)
  • Place of Presentation: Montecatini Terme, Tuscany Italy
  • Year and Date: 2010-06-16
• [Presentation] High-Pressure Optical Absorption and Raman Scattering in InN Thin Films Grown by Molecular Beam Epitaxy (2010)
  • Author(s): J.Ibanez, A.Segura, F.J.Manjon, R.Cusco, L.Artus, T.Yamaguchi, Y.Nanishi
  • Organizer: 2010 E-MRS Spring Meeting
  • Place of Presentation: Strasbourg France
  • Year and Date: 2010-06-10
• [Presentation] RF-MBE Growth of InN/InGaN MQW Structures by DERI and Their Characterization (2010)
  • Author(s): T.Araki, H.Umeda, T.Yamaguchi, T.Sakamoto, E.Yoon, Y.Nanishi
  • Organizer: 22nd International Conference on Indium Phosphide and Related Materials(IPRM2010)
  • Place of Presentation: Takamatsu symbol tower, Kagawa Japan
  • Year and Date: 2010-06-01
• [Presentation] Free-Charge Carrier Properties and Doping Mechanisms of Thin Films of InN and Related Alloys (2010)
  • Author(s): V. Darakchieva, M.Schubert, K.Lorenz, N.P.Barradas, E.Alves, T.Hofmann, B.Monemar, W.J.Schaff, C.L.Hsiao, L.C.Chen, L.W.To, T.Yamaguchi, Y.Nanishi
  • Organizer: 5th International Conference on Spectroscopic Ellipsometry (ICSE-V)
  • Place of Presentation: Albany, New York USA
  • Year and Date: 2010-05-27
• [Presentation] Growth, Monitoring and InN/InGaN MQW Structure Fabrication by DERI Method (2010)
  • Author(s): Y.Nanishi, T.Yamaguchi
  • Organizer: IX International Conference of Polish Society for Crystal Growth
  • Place of Presentation: Gdansk-Sobieszewo Poland
  • Year and Date: 2010-05-25
• [Presentation] Undoped and Mg-doped InN Grown Using Droplet Elimination by Radical-beam Irradiation Method (2010)
  • Author(s): T.Yamaguchi, K.Wang, R.Iwamoto, N.Miller, M.Mayer, J.W.Ager III, K.M.Yu, W.Walukiewicz, T.Araki, Y.Nanishi
  • Organizer: The 8th International Symposium on Semiconduct or Light Emitting Devices (ISSLED2010)
  • Place of Presentation: Beijing, China
  • Year and Date: 2010-05-18
• [Presentation] DERI法のRHEED強度その場観察手法を用いたラジカルセル診断 (2010)
  • Author(s): 勝木拓郎、福本英太、山口智広、荒木努、名西〓之
  • Organizer: 第2回窒化物半導体結晶成長講演会
  • Place of Presentation: 三重大学三重県三重市
  • Year and Date: 2010-05-15
• [Presentation] DERI法を用いたIn系窒化物半導体の結晶成長とデバイス構造作製への応用 (2010)
  • Author(s): 山口智広、荒木努、名西〓之
  • Organizer: 第2回窒化物半導体結晶成長講演会
  • Place of Presentation: 三重大学三重県三重市
  • Year and Date: 2010-05-14
• [Presentation] Japan-Korea Joint Symposium (2010)
  • Author(s): Y.Nanishi
  • Organizer: Japan-Korea Joint Symposium
  • Place of Presentation: Daejeon Korea
  • Year and Date: 2010-04-21
• [Presentation] 窒化物光半導体フロンティア領域開拓の現状 (2010)
  • Author(s): 名西〓之
  • Organizer: LED総合フォーラム
  • Place of Presentation: 阿波銀ホール徳島県徳島市
  • Year and Date: 2010-04-17
• [Presentation] Optical Hall Effect in InN : Bulk Doping Mechanism and Surface Electron Accumulation Properties (2010)
  • Author(s): V.Darakchieva, M.Schubert, T.Hofmann, Monemar, W.J.Schaff, C.L.Hsiao, L.C.Chen, L.W Tu, T.Yamaguchi, Y.Nanishi
  • Organizer: PLCN10
  • Place of Presentation: Cuernavaca Mexico
  • Year and Date: 2010-04-12
• [Presentation] N極性及びIn極性のInN-MIS構造の作製と評価 (2010)
  • Author(s): 森本健大、三木彰、山口智弘、前田就彦、荒木努、名西〓之
  • Organizer: 2011年春季第58回応用物理学関係連合講演会
  • Place of Presentation: 神奈川工科大学神奈川県厚木市
  • Year and Date: 2010-03-24
• [Presentation] 電流・電圧特性の温度依存性評価によるp型InNの検証 (2010)
  • Author(s): 櫻井秀昭、井脇明日香、岩本亮輔、山口智弘、城川潤二郎、荒木努、名西〓之
  • Organizer: 2011年春季第58回応用物理学関係連合講演会
  • Place of Presentation: 神奈川工科大学神奈川県厚本市
  • Year and Date: 2010-03-24