2011 Fiscal Year Final Research Report
Research for Terahertz Quantum Cascade Lasers using Nitride-based Semiconductors
| Project/Area Number |
21246005
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| Research Category |
Grant-in-Aid for Scientific Research (A)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | The Institute of Physical and Chemical Research |
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Principal Investigator |
HIRAYAMA Hideki 独立行政法人理化学研究所, テラヘルツ量子素子研究チーム, チームリーダー (70270593)
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| Co-Investigator(Kenkyū-buntansha) |
TERASHIMA Wataru 独立行政法人理化学研究所, テラヘルツ量子素子研究チーム, 基幹研究所研究員 (30450406)
IKEDA Noriaki 独立行政法人理化学研究所, テラヘルツ量子素子研究チーム, 研究員 (90267477)
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| Project Period (FY) |
2009 – 2011
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| Keywords | テラヘルツ / 量子カスケードレーザ / 窒化物半導体 / 金属プラズモン導波路 / 分子線エピタキシー / サブバンド間遷移 / 自然放出光 / 電流注入 |
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| Research Abstract |
Terahertz quantum-cascade lasers(THz-QCLs) are small-size, narrow line-width, cw and high-power THz laser light sources and are attractive for a lot of applications. We have developed GaN/InAlGaN THz-QCLs by employing a longitudinal-optical(LO) phonon depopulation scheme, for the purpose of achieving undeveloped frequencies, i. e., 5-12 THz. We achieved first observation of spontaneous emission from nitride-based GaN/AlGaN semiconductor superlattices(SLs) intersubband levels by current injection. We confirmed the origin of the THz spontaneous emission by using polarization dependence of emission from the QCL structures.
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