2012 Fiscal Year Final Research Report
Reliability improvement of GaN transistors based on the control of electronic states and a nobel gate structure
| Project/Area Number |
21246007
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| Research Category |
Grant-in-Aid for Scientific Research (A)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Thin film/Surface and interfacial physical properties
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| Research Institution | Hokkaido University |
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Principal Investigator |
HASHIZUME Tamotsu 北海道大学, 量子集積エレクトロニクス研究センター, 教授 (80149898)
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| Co-Investigator(Kenkyū-buntansha) |
SATO Taketomo 北海道大学, 量子集積エレクトロニクス研究センター, 准教授 (50343009)
KOGA Hiroaki 北海道大学, 量子集積エレクトロニクス研究センター, 助教 (80519413)
KUBO Toshiharu (10422338)
AKAZAWA Masamichi 北海道大学, 量子集積エレクトロニクス研究センター, 准教授 (30212400)
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| Project Period (FY) |
2009 – 2012
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| Keywords | 窒化ガリウム / 表面・界面 / 電子準位 / 絶縁膜 / トランジスタ |
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| Research Abstract |
To improve the operation stability of GaN-heterostructure transistors, we have carried out characterization and control of electronic states at insulator-semiconductor interfaces, fabrication and characterization of the multi-mesa-channel (MMC) transistors, and the related experiments. By applying the novel simulation and photo-assisted capacitance-voltage methods to Al_2O_3/ AlGaN/GaN structures, we determined the density distribution of electronic states at the Al_2O_3/AlGaN for the first time. It was also found that the MMC structure is very effective in improving the current stability of the GaN-based transistors.
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