2012 Fiscal Year Final Research Report
Development of Fundamental Fabrication Processes for Functionalizing Electronic Devices Composed of High-Quality CVD Diamond
| Project/Area Number |
21246011
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| Research Category |
Grant-in-Aid for Scientific Research (A)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Thin film/Surface and interfacial physical properties
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| Research Institution | Osaka University |
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Principal Investigator |
ITO Toshimichi 大阪大学, 大学院・工学研究科, 教授 (00183004)
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| Co-Investigator(Kenkyū-buntansha) |
MAIDA Osamu 大阪大学, 大学院・工学研究科, 助教 (40346177)
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| Project Period (FY) |
2009 – 2012
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| Keywords | CVDダイヤモンド / マイクロ波プラズマCVD / 微斜面(001)基板 / ホウ素ドープ / 燐ドープ / 粒子検出器 / パワーデバイス / 不純物バンド伝導 |
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| Research Abstract |
We havedemonstrated effectiveness of homoepitaxial growth on a vicinal (001) substrate using high-power-density microwave-plasma chemical-vapor-deposition on increases in the crystalline quality and growth rate of diamond films, and have found a new method for suppressing large degradations of carrier mobilities in highly doped samples. Detection efficiency offabricated diamond detectors for deep-ultra-violet light and soft-x-ray at low bias voltages has been substantially improved. Effectiveness of Si-diamond survey meter at heavy radiation doses has also been demonstrated. In addition, a devicestructure has been proposed for a normally-off-type p-i-p diamond FET working at room temperature.
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Research Products
(15 results)
