2013 Fiscal Year Final Research Report
High efficiency chemical thinning and dicing process for SiC semiconductor substrate
| Project/Area Number |
21246027
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| Research Category |
Grant-in-Aid for Scientific Research (A)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Production engineering/Processing studies
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| Research Institution | Osaka University |
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Principal Investigator |
SANO Yasuhisa 大阪大学, 工学(系)研究科(研究院), 准教授 (40252598)
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| Project Period (FY) |
2009-04-01 – 2013-03-31
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| Keywords | 特殊加工 / 炭化ケイ素 / 薄化 / ダイシング / 大気圧プラズマ / PCVM |
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| Research Abstract |
Silicon carbide (SiC) is a promising semiconductor material for energy-saving power devices. However, because of its high hardness and brittleness, few conventional machining methods can handle this material efficiently. A plasma chemical vaporization machining (PCVM) technique, which is plasma etching using atmospheric-pressure plasma, has been considered for thinning and dicing process of SiC substrates by using the newly-developed PCVM apparatus. As a result of thinning experiments, a maximum removal rate of 500 nm/min was obtained over the entire 2-inch 4H-SiC (0001) wafer. And as a result of basic cutting experiments, a maximum removal rate of more than 0.01 mm/min with a groove width of less than 0.2 mm was successfully achieved.
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Research Products
(25 results)
