2012 Fiscal Year Final Research Report
Local opticalresponse of impurity nanostructures anddevelopmentof scalable photon devices
| Project/Area Number |
21246052
|
|---|
| Research Category |
Grant-in-Aid for Scientific Research (A)
|
| Allocation Type | Single-year Grants |
|---|
| Section | 一般 |
|---|
| Research Field |
Electronic materials/Electric materials
|
|---|
| Research Institution | Kobe University |
|---|
Principal Investigator |
KOJIMA Osamu 神戸大学, 大学院・工学研究科, 准教授 (00415845)
|
|---|
| Co-Investigator(Kenkyū-buntansha) |
KITA Takashi 神戸大学, 大学院・工学研究科, 教授 (10221186)
|
|---|
| Project Period (FY) |
2009 – 2012
|
| Keywords | 窒素ペア / 励起子 / 光子デバイス / GaAs |
|---|
| Research Abstract |
Electronic states of impurities doped in semiconductors are extremely uniform and can be treated as ideal QDs. Such QDs with the uniform electronic states enable to control the interaction between the exciton and photon, and, resultantly, the device performance will come to depend on the impurity density. We developed a novel technique of nitrogen delta-doping into GaAs and clarified the optical properties of the exciton fine structure bound to nitrogen pairs. Furthermore, we demonstrated that the precise control of the fine structure using magnetic field and a scalable change in the strength of the exciton-photon interaction.
|
