• Search Research Projects
  • Search Researchers
  • How to Use
  1. Back to project page

2011 Fiscal Year Final Research Report

Formation of Strained Ge Channel and Material Evaluation for High performance ULSI

Research Project

  • PDF
Project/Area Number 21246054
Research Category

Grant-in-Aid for Scientific Research (A)

Allocation TypeSingle-year Grants
Section一般
Research Field Electronic materials/Electric materials
Research InstitutionKyushu University

Principal Investigator

NAKASHIMA Hiroshi  九州大学, 産学連携センター, 教授 (70172301)

Co-Investigator(Renkei-kenkyūsha) WANG Dong  九州大学, 産学連携センター, 特任准教授 (10419616)
Research Collaborator YANG Haigui  JSPS, 外国人, 特別研究員
Project Period (FY) 2009 – 2011
Keywords半導体物性 / 電子・電気材料 / 結晶工学 / 先端機能デバイス / 絶縁膜
Research Abstract

In this study, we established the fabrication of strained SiGe-on-insulator(SGOI) using Ge condensation by dry oxidation and the fabrication of high permittivity(High-k) gate insulator on Ge. Through these researches, we obtained the following results. The SGOI with a Ge fraction of 50% showed high strain ratio and hole channel mobility, which were 1. 7% and 570 cm^2/V・s, respectively. We achieved the High-k/Ge gate stack with the performances of an equivalent SiO_2 thickness(EOT) of 1. 0 nm, an interface state density of 9×10^<11> cm^<-2> eV^<-1>, and a leakage current of 4 orders of magnitude lower than SiO_2 with the same EOT. Also, we fabricated n-and p-MOSFET and achieved an electron mobility of 1097 cm^2/V・s and a hole mobility of 376 cm^2/V・s, which mean approximately 1. 5 times enhancement compared with Si.

  • Research Products

    (5 results)

All 2011 2010 Other

All Journal Article (2 results) (of which Peer Reviewed: 2 results) Presentation (2 results) Remarks (1 results)

  • [Journal Article] Influence of SiGe layer thickness and Ge fraction on compressive strain and hole mobility in a SiGe-on-insulator substrate fabricated by the Ge condensation technique2011

    • Author(s)
      H. Yang, D. Wang, H. Nakashima
    • Journal Title

      Thin Solid Films

      Volume: Vol.520, No.8 Pages: 3283-3287

    • Peer Reviewed
  • [Journal Article] Passivation of Electrically Active Defects in Ge-Rich SiGe-on-Insulator by Al2O3 Deposition and Subsequent Post-Deposition Annealing2010

    • Author(s)
      H. Yang, M. Iyota, S. Ikeura, D. Wang, H. Nakashima
    • Journal Title

      App. Phys. Express

      Volume: Vol.3 Pages: 071302-3

    • Peer Reviewed
  • [Presentation] "Mobility and strain evaluations of SiGe-on-insulator substrates with different SiGe layer thickness and Ge fraction2011

    • Author(s)
      H. Yang, D. Wang, H. Nakashima
    • Organizer
      7^<th> Int. Conf. on Si Epitaxy and Heterostructures
    • Place of Presentation
      Leuven, Belgium
    • Year and Date
      2011-08-29
  • [Presentation] High-quality gate-stack formation on Ge and defect termination at the interface2011

    • Author(s)
      H. Nakashima, K. Hirayama, K. Yamamoto, H. Yang, D. Wang
    • Organizer
      E-MRS 2011 Spring Meeting
    • Place of Presentation
      Nice, France
    • Year and Date
      2011-05-11
  • [Remarks]

    • URL

      http://astec.kyushu-u.ac.jp/nakasima/naka_home.htm

URL: 

Published: 2013-07-31   Modified: 2018-02-02  

Information User Guide FAQ News Terms of Use Attribution of KAKENHI

Powered by NII kakenhi