2011 Fiscal Year Final Research Report
Multimorphism observed in peculiar silicide semiconductors and its applications to materials science
| Project/Area Number |
21246101
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| Research Category |
Grant-in-Aid for Scientific Research (A)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Structural/Functional materials
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| Research Institution | Kyoto University |
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Principal Investigator |
INUI Haruyuki 京都大学, 大学院・工学研究科, 教授 (30213135)
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| Co-Investigator(Kenkyū-buntansha) |
KISHIDA Kyosuke 京都大学, 大学院・工学研究科, 准教授 (20354178)
OKAMOTO Norihiko 京都大学, 大学院・工学研究科, 助教 (60505692)
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| Project Period (FY) |
2009 – 2011
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| Keywords | 熱電変換材料 / 無次元性能指数 / ゼーベック係数 / 電気伝導度 / 熱伝導度 / 微細組織 / ラットリング / 透過電子顕微鏡法 |
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| Research Abstract |
The possibility for the improvement of thermoelectric properties of Ru silicide(Ru2Si3) has been investigated through controlling multimorphic nano-structures that are formed based on the variety of the arrangement of the Si sublattice. An attempt has also been made to establish a guiding principles for new materials search for better thermoelectric properties and the property improvement The multimorphic interface that is recently found to occur between a series of Chimney-Ladder compounds possesses an idealistic interface to scatter phonon but to transmit electrons, since the metal sublattice is kept the same across the interface but the periodicity of screw arrangement of Si atoms is different across the interface. The effectiveness of the multimorphic interface in improving the thermoelectric properties of Ru silicide-based materials was clearly shown by experiment.
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Research Products
(51 results)
