2011 Fiscal Year Final Research Report
Fabrication of self-aligned room-temperature operating single electron transistor by anodization
| Project/Area Number |
21310085
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Microdevices/Nanodevices
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| Research Institution | Tohoku University |
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Principal Investigator |
KIMURA Yasuo 東北大学, 電気通信研究所, 准教授 (40312673)
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| Co-Investigator(Kenkyū-buntansha) |
HIRANO Ayumi 東北大学, 医工学研究科, 准教授 (80339241)
NIWANO Michio 東北大学, 電気通信研究所, 教授 (20134075)
AONUMA Yuki 東北大学, 電気通信研究所, 助教 (80582262)
RAHMAN Mohammad 東北大学, 電気通信研究所, 教育研究支援者 (70620003)
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| Project Period (FY) |
2009 – 2011
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| Keywords | ナノ構造作製 / 陽極酸化 |
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| Research Abstract |
In this study, the hybrid process between anodization process of aluminum (Al)and photolithography as a top-down process was developed to fabricate self-aligned room-temperature operating single electron transistors. Furthermore, anodization processes of titanium, which is one of valve metals, were controlled to directly form titanium oxide nanotube films on a substrate and they were applied to devices such as a miniaturized gas sensor and a dye-sensitized solar cell (DSC)
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