2011 Fiscal Year Final Research Report
Development of hetero-structure control and opto-electronics device application technology based on III-nitride semiconductor nanowall crystal
| Project/Area Number |
21310087
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Microdevices/Nanodevices
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| Research Institution | Sophia University |
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Principal Investigator |
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| Co-Investigator(Renkei-kenkyūsha) |
KISHINO Katsumi 上智大学, 理工学部, 教授 (90134824)
NOMURA Ichirou 上智大学, 理工学部, 准教授 (00266074)
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| Project Period (FY) |
2009 – 2011
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| Keywords | ナノ光デバイス / ナノ電子デバイス / ガリウムナイトライド / ナノウォール / 半導体レーザ / FET / 窒化物半導体 / 選択成長 |
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| Research Abstract |
The selective area RF-MBE growth technology of artificially shape controlled thin GaN nano-crystal of "nanowall" was established. It was found that dislocation stopping mechanism at the bottom of nanowall brings about high quality dislocation-free crystal growth. Nanowall top shape control technique, growth conditions of embedded InGaN active layer and dependency of emission characteristics of InGaN/GaN nanowall was clarified. The potentiality of GaN nanowall for optical and electronic device application was proved by room temperature photo-pumped lasing of GaN nanowall and first demonstration of AlGaN/GaN heterostructure nano-FET.
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