2011 Fiscal Year Final Research Report
Large grain-sized FeSi_2 films by micro-channel epitaxy for infrared detectors
| Project/Area Number |
21360002
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | University of Tsukuba |
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Principal Investigator |
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| Co-Investigator(Kenkyū-buntansha) |
AKIYAMA Kensuke 神奈川県産業技術センター, 主任研究員 (70426360)
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| Co-Investigator(Renkei-kenkyūsha) |
SEKIGUCHI Takashi 物質・材料研究機構, グループリーダー (00179334)
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| Project Period (FY) |
2009 – 2011
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| Keywords | 新機能材料 / 半導体シリサイド |
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| Research Abstract |
We have epitaxially grown undoped β-FeSi_2 films on Si (111) substrates via atomic-hydrogen-assisted molecular-beam epitaxy. They showed n-type conduction and had a residual electron density that was more than two orders of magnitude lower than the hole density of films grown without atomic hydrogen (of the order of 10^<16> cm^<-3> at room temperature). We have also achieved the formation of β-FeSi_2 epitaxial films with grain-sizes exceeding 1 μm on SOI substrates by metalorganic vapor phase epitaxy using β-FeSi_2 island-like templates formed by reactive deposition epitaxy.
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