2011 Fiscal Year Final Research Report
Creation of the modulated facet structures of III-nitride semiconductors and development of the white LEDs with wide and continuous wavelength spectra
| Project/Area Number |
21360007
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | Mie University |
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Principal Investigator |
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| Co-Investigator(Kenkyū-buntansha) |
MIYAKE Hideto 三重大学, 大学院・工学研究科, 准教授 (70209881)
MOTOGAITO Atsushi 三重大学, 大学院・工学研究科, 助教 (00303751)
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| Project Period (FY) |
2009 – 2011
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| Keywords | エピタキシャル成長 / 選択成長 / 非極性 / 窒化物半導体 / 発光ダイオード |
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| Research Abstract |
In this study, in order to solve the fluctuation of the light emitting wave length and color rendering properties, the selective area growth on a plane GaN and the fabrication of the flat m-plane GaN are carried out aiming at the development of the white LED with continuous and wide wavelength range. By controlling growth temperature and growth pressure, the facet controlled structures can be fabricated. Also by using this technique, the flat m-plane GaN can be obtained. From these results, The development of the white LED with continuous and wide wavelength range can be realized.
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Research Products
(41 results)
