2011 Fiscal Year Final Research Report
Bi-containing III-V semiconductor super lattices for laser diodes with temperature-insensitive laser oscillation wavelength
| Project/Area Number |
21360008
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | Kyoto Institute of Technology |
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Principal Investigator |
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| Co-Investigator(Kenkyū-buntansha) |
OE Kunishige 京都工芸繊維大学, 工芸科学研究科, 教授 (20303927)
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| Project Period (FY) |
2009 – 2011
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| Keywords | 結晶成長 / 半導体物性 / 光物性 / 超格子 / 電子・電気材料 |
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| Research Abstract |
Bismuth-containing III-V semiconductors such as GaAsBi and related alloys have unusual properties owing to a reduction of the temperature coefficient of the band gap. These dilute bismuthide III-V alloys are promising for laser diodes with temperature-insensitive wavelengths. The results of transmission electron microscopy, photoluminescence measurements and deep-level transient spectroscopy reveal that metastable GaAsBi grown by molecular beam epitaxy(MBE) has sufficient quality desirable for optoelectronic devices. Laser oscillation for GaAsBi with a temperature-insensitive wavelength is achieved in this study for the first time. GaAsBi/AlGaAs multi-quantum wells have been successfully grown by MBE. Traps at GaAsBi/AlGaAs interface were analyzed, and the trap density was reduced.
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