2013 Fiscal Year Final Research Report
Development of a short channel organic FET having high switching speed
| Project/Area Number |
21360011
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | Osaka University |
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Principal Investigator |
AKAI Megumi 大阪大学, 工学(系)研究科(研究院), 助教 (50437373)
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| Project Period (FY) |
2009-04-01 – 2014-03-31
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| Keywords | 有機・分子エレクトロニクス / マイクロ・ナノデバイス / ナノ材料 / 有機半導体 / デバイス設計・プロセス |
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| Research Abstract |
This study aimed to fabricate a short channel organic field effect transistor (FET), which will have high switching speed from MHz to GHz by improving the device structure. We fabricated bottom contact type ruburene FET using our original flattened metal electrodes. Maximum switching speed up to 6MHz has attained owing to decreased parasitic capacitance realized by an individual gate structure and effort to decrease the contact resistance. However, the attainment was still lower than initial desired value, 100MHz, because of our insufficient device fabrication technique. We have tried to find a wet process fabricate technique of carbon nanotube FET device, which will have similar advantage of organic devices. We successfully fabricated a bottom contact carbone nanotube FET on our flat electrodes showing ambipolar characteristics by a conventional wet process.
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