2011 Fiscal Year Final Research Report
Study of flashmemory using organic and molecular materials
| Project/Area Number |
21360012
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | Hiroshima University |
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Principal Investigator |
NAKAJIMA Anri 広島大学, ナノデバイス・バイオ融合科学研究所, 准教授 (70304459)
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| Co-Investigator(Kenkyū-buntansha) |
YOKOYAMA Shin 広島大学, ナノデバイス・バイオ融合科学研究所, 教授 (80144880)
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| Project Period (FY) |
2009 – 2011
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| Keywords | 有機 / 分子エレクトロニクス |
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| Research Abstract |
A gate stack structure with an organic-polymer tunneling gate insulator on a C_60-containing organic-polymer layer was developed for use as nonvolatile flash memory. Examination of the memory characteristics revealed substantial flatband voltage shifts for carrier injection into C_60 molecules. A long retention time was obtained for electron injection. Charge redistribution phenomena were observed in the electron retention characteristics immediately after the bias voltage application was terminated.
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Research Products
(1 results)
