2011 Fiscal Year Final Research Report
Investigation on Evanescent-to-Propagating Light Transformation Technique in a Patterned Substrate
| Project/Area Number |
21360016
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | National Institute of Advanced Industrial Science and Technology |
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Principal Investigator |
WANG Xuelun 独立行政法人産業技術総合研究所, ナノシステム研究部門, 主任研究員 (80356609)
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| Co-Investigator(Kenkyū-buntansha) |
SHIMIZU Mitsuaki 独立行政法人産業技術総合研究所, 先進パワーエレクトロニクス研究センター, 研究チーム長 (10357212)
OGURA Mutsuo 独立行政法人産業技術総合研究所, ナノシステム研究部門, 主任研究員 (90356717)
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| Project Period (FY) |
2009 – 2011
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| Keywords | 光物性 / エバネッセント光 / リッジ構造 / 指向性 |
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| Research Abstract |
The evanescent-to-propagating light transformation phenomenon in a fine ridge structure was investigated by optical techniques. It is found that light-extraction efficiency can be further enhanced by about 1.5 times by depositing a thin SiO_2 film on the ridge surface, due to occurrence of the evanescent wave coupling effect at both the semiconductor-SiO_2 and SiO_2-air interfaces. It is also shown that high spatial directionality could be achieved by localizing the light-emitting area around the ridge center.
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