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2012 Fiscal Year Final Research Report

Study on spin dependent ballistic electron mapping and spin injectioninto semiconductors

Research Project

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Project/Area Number 21360023
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Research Field Thin film/Surface and interfacial physical properties
Research InstitutionOsaka University

Principal Investigator

HASEGAWA Shigehiko  大阪大学, 産業科学研究所, 准教授 (50189528)

Co-Investigator(Kenkyū-buntansha) ZHOU Yikai  大阪大学, 産業科学研究所, 助教 (60346179)
ASAHI Hajime  大阪大学, 産業科学研究所, 特任教授 (90192947)
Project Period (FY) 2009 – 2012
Keywords走査型トンネル顕微鏡 / スピンエレクトロニクス / 分子線エピタキシー / 希薄磁性半導体 / トンネル現象 / スピン依存状態密度 / ショットキー接合
Research Abstract

We have investigated structural, electrical, and magnetic properties both of ferromagnetic electrodes on GaN as spin injectors and of III-nitride based dilute semiconductors as spin detectors toward development of ballistic electron emission mapping measurement.

  • Research Products

    (27 results)

All 2013 2012 2011 2010 2009

All Journal Article (9 results) (of which Peer Reviewed: 9 results) Presentation (18 results)

  • [Journal Article] Growth parameter dependence of structural, electrical and magnetic properties in GaGdNlayers grown on GaN(0001)2013

    • Author(s)
      S. Sano, S. Hasegawa, Y. Mitsuno, K. Higashi, M. Ishimaru, T. Sakurai, H. Ohta, H. Asahi
    • Journal Title

      J. Crystal Growth

    • Peer Reviewed
  • [Journal Article] Photoluminescence properties in GaGdN grown on GaN(0001) by PA-MBE2013

    • Author(s)
      K. Higashi, S. Hasegawa, S. Sano, Y. K. Zhou, H. Asahi
    • Journal Title

      J. Crystal Growth

    • Peer Reviewed
  • [Journal Article] Observation of large Zeeman splitting in GaGdN/AlGaN ferromagnetic semiconductor double quantum well superlattices2012

    • Author(s)
      Y. K. Zhou, M. Almokhtar, H. Kubo, N.Mori, S. Emura, S. Hasegawa, H. Asahi
    • Journal Title

      Solid State Commun

      Volume: 162 Pages: 1270-1273

    • Peer Reviewed
  • [Journal Article] Coherent growth of GaGdN layers with high Gd concentration on GaN(0001)2012

    • Author(s)
      K. Higashi, S. Hasegawa, D. Abe, Y. Mitsuno, S. Komori, F. Ishikawa, M. Ishimaru, and H. Asahi
    • Journal Title

      Appl. Phys. Lett

      Volume: 101 Pages: 221902

    • Peer Reviewed
  • [Journal Article] Strong atomic ordering in Gd-doped GaN2012

    • Author(s)
      M. Ishimaru, K. Higashi, S. Hasegawa, H. Asahi, K. Sato, and T. J. Konno
    • Journal Title

      Appl. Phys. Lett

      Volume: 101 Pages: 101912

    • Peer Reviewed
  • [Journal Article] Structural, magnetic and optical studies of ultrathin GaGdN/AlGaN multiquantum well structure2012

    • Author(s)
      M. Almokhtar, S. Emura, Y. K. Zhou, S.Hasegawa, and H. Asahi
    • Journal Title

      phys. stat. sol.(c)

      Volume: 9 Pages: 737-740

    • Peer Reviewed
  • [Journal Article] Effect of growth conditions on magnetic and structural properties in Gd-doped GaN layers grown by plasma-assisted molecular beam epitaxy2012

    • Author(s)
      S. Hasegawa, S. Komori, K. Higashi, D.Abe, Y.-K. Zhou, and H. Asahi
    • Journal Title

      phys. stat. sol. (c)

      Volume: 9 Pages: 741-744

    • Peer Reviewed
  • [Journal Article] Structural and magnetic properties of GaGdN/GaN superlattice structures2010

    • Author(s)
      Y. K. Zhou, S. W. Choi, S. Kimura, S. Emura, S. Hasegawa, and H. Asahi
    • Journal Title

      Thin Solid Films

      Volume: 518 Pages: 5659-5661

    • Peer Reviewed
  • [Journal Article] Growth and characterization of Fe nanostructures on GaN2009

    • Author(s)
      Y. Honda, S. Hayakawa, S. Hasegawa, H. Asahi
    • Journal Title

      Appl. Surf. Sci

      Volume: 256 Pages: 1069-1072

    • Peer Reviewed
  • [Presentation] MBE Growth and Characterization of GaN-based Dilute Magnetic Semiconductor Nanostructures2012

    • Author(s)
      S. Hasegawa, Y.-K. Zhou, and H. Asahi
    • Organizer
      2012 Collaborative Conference on Crystal Growth (3CG)
    • Place of Presentation
      Orlando, USA
    • Year and Date
      20121211-14
  • [Presentation] Growth and characterization of III-nitride based dilute magnetic semiconductors and their nanostructures2012

    • Author(s)
      S. Hasegawa, Y.-K. Zhou, and H. Asahi
    • Organizer
      2012 Energy Materials Nanotechnology Fall Meeting
    • Place of Presentation
      Chengdu, China
    • Year and Date
      20121022-26
  • [Presentation] Novel properties in GaN-based ferromagnetic semiconductor quantum wells2012

    • Author(s)
      Y. K. Zhou, Y. Nakatani, M. Sano, S. Emura,S. Hasegawa, H. Asahi
    • Organizer
      Villa Conference on Energy, Materials, and Nanotechnology 2012
    • Place of Presentation
      Orlando, USA
    • Year and Date
      20120416-20
  • [Presentation] GaN(0001)表面上への窒化鉄薄膜形成とその評価2012

    • Author(s)
      米岡賢,市原寛也,別府亜由美,山口明哲,長谷川繁彦, 朝日一
    • Organizer
      第59回応用物理学会関係連合講演会
    • Place of Presentation
      早稲田大学
    • Year and Date
      20120315-18
  • [Presentation] Magnetic Properties of Iron Nitride Thin Films Grown on GaN(0001) Surfaces2012

    • Author(s)
      M. Yoneoka, S. Hasegawa, H. Ichihara, A. Beppu, H. Yamaguchi, H. Asahi
    • Organizer
      The 15th SANKEN International Symposium 2012, The 10th SANKEN Nanotechnology Symposium
    • Place of Presentation
      Osaka
    • Year and Date
      20120112-13
  • [Presentation] Growth and characterization of GaN-based dilute magnetic semiconductors2011

    • Author(s)
      S. Hasegawa and H. Asahi
    • Organizer
      Asia-Pacific Workshop on Materials Characterization
    • Place of Presentation
      Chennai, India
    • Year and Date
      20110922-24
  • [Presentation] GaN(0001)表面上の窒化鉄薄膜形成とその磁気特性2011

    • Author(s)
      米岡賢,市原寛也,別府亜由美,山口明哲,長谷川繁彦, 朝日一
    • Organizer
      第72回応用物理学会学術講演会
    • Place of Presentation
      山形大学
    • Year and Date
      20110829-0902
  • [Presentation] Effect of growth conditions on magnetic and structural properties in Gd-doped GaN layers grown by plasma-assisted molecular beam epitaxy2011

    • Author(s)
      S. Hasegawa, S. Komori, K. Higashi, D. Abe, Y.K. Zhou, and H. Asahi
    • Organizer
      9th International Conference on Nitride Semiconductors
    • Place of Presentation
      Glasgow, U
    • Year and Date
      20110710-15
  • [Presentation] Growth and characterization of GaN-based dilute magnetic semicondcutors and their nanostructures2011

    • Author(s)
      S. Hasegawa, Y.K. Zhou, S. Emura, and H. Asahi
    • Organizer
      2011 Villa Conference on Interactions Among Nanostructures (VCIAN)
    • Place of Presentation
      Red Rock Casino, Resort and Spa, Las Vegas, Nevada, USA
    • Year and Date
      20110421-25
  • [Presentation] GaN(0001)表面上へのCo薄膜の成長とその評価2011

    • Author(s)
      山口明哲,米岡賢, Nurassyakirin Bin Hasbi,長谷川繁彦
    • Organizer
      第60回応用物理学会春季学術講演会
    • Place of Presentation
      神奈川工科大学
    • Year and Date
      20110327-30
  • [Presentation] GaN(0001)表面上の窒化鉄薄膜の形成と評価2011

    • Author(s)
      米岡賢,古屋貴明,市原寛也,別府亜由美,長谷川繁彦, 朝日一
    • Organizer
      第58回応用物理学会関係連合講演会
    • Place of Presentation
      神奈川工科大学
    • Year and Date
      20110324-27
  • [Presentation] Growth of Co thin films on GaN(0001) and their magnetic properties2011

    • Author(s)
      A. Beppu, S. Hasegawa, H. Ichihara, M. Yoneoka, H. Yamaguchi and H. Asahi
    • Organizer
      The 6th Int.Symposium on Surface Science
    • Place of Presentation
      Tokyo
    • Year and Date
      2011-11-15
  • [Presentation] Effects of the morphology of Fe thin films grown on GaN(0001) on their magnetic properties2011

    • Author(s)
      H. Ichihara, S. Hasegawa, A. Beppu, M. Yoneoka, H. Yamaguchi and H. Asahi
    • Organizer
      The 6th Int.Symposium on Surface Science
    • Place of Presentation
      Tokyo
    • Year and Date
      2011-11-15
  • [Presentation] Magnetic properties of Fe/Fe oxide core-shell clusters formed on GaN(0001)2010

    • Author(s)
      T. Furuya, M. Sotani, H. Ichihara, S. Hasegawa, H. Asahi
    • Organizer
      18th International Colloquium on Scanning Probe Microscopy (ICSPM18)
    • Place of Presentation
      Atagawa
    • Year and Date
      20101209-11
  • [Presentation] Feナノドットの磁気抵抗効果2010

    • Author(s)
      市原寛也,古屋貴明,別府亜由美,米岡賢,長谷川繁彦,朝日一
    • Organizer
      第30回表面科学学術講演会
    • Place of Presentation
      大阪大学
    • Year and Date
      20101104-06
  • [Presentation] Magnetotransport properties in Gd-doped GaN grown by plasma-assisted molecular beam epitaxy2010

    • Author(s)
      S. Hasegawa, M. Kin, D. Abe, K. Higashi, Y.K. Zhou and H. Asahi
    • Organizer
      International Workshop on Nitride semiconductors (IWN2010)
    • Place of Presentation
      Tampa, Florida, U.S.A
    • Year and Date
      20100919-24
  • [Presentation] GaN(0001)基板上に形成したFeクラスターの電流磁気効果2010

    • Author(s)
      古屋 貴明, 市原 寛也, 長谷川 繁彦, 朝日 一
    • Organizer
      第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学
    • Year and Date
      20100914-17
  • [Presentation] 磁場印加中におけるFeナノドットのスピン偏極STM観察2010

    • Author(s)
      市原寛也,曽谷基紀,古屋貴明,長谷川繁彦,朝日一
    • Organizer
      第57回応用物理学会関係連合講演会
    • Place of Presentation
      東海大学
    • Year and Date
      20100317-20

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Published: 2014-08-29  

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