2011 Fiscal Year Final Research Report
Planar type all-optical switches of semiconductor multilayer using quantum dots
| Project/Area Number |
21360035
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Applied optics/Quantum optical engineering
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| Research Institution | The University of Tokushima |
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Principal Investigator |
ISU Toshiro 徳島大学, 大学院・ソシオテクノサイエンス研究部, 特任教授 (00379546)
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| Co-Investigator(Kenkyū-buntansha) |
KITADA Takahiro 徳島大学, 大学院・ソシオテクノサイエンス研究部, 特任准教授 (90283738)
MORITA Ken 徳島大学, 大学院・ソシオテクノサイエンス研究部, 特任講師 (30448344)
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| Project Period (FY) |
2009 – 2011
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| Keywords | 光エレクトロニクス / 超高速全光スイッチ |
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| Research Abstract |
We fabricated GaAa/ AlAs multilayer cavity structures with InAs quantum dots(QDs) embedded in strain-relaxed InGaAs layers by molecular beam epitaxy on the GaAs substrate, and nonlinear optical responses were investigated. We found that Er-doping induced ultrafast decay of the photo-excited carriers in the InAs QDs, and confirmed that nonlinear optical signals with a response time of around 1ps were obtained in the cavity structure with QDs, which were two order of magnitude larger than that without QDs.
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Research Products
(39 results)
