2011 Fiscal Year Final Research Report
Fundamental research on spin-dependent functional devices based on half-metallic ferromagnet/semiconductor hybrid structures
| Project/Area Number |
21360140
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Hokkaido University |
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Principal Investigator |
UEMURA Tetsuya 北海道大学, 大学院・情報科学研究科, 准教授 (20344476)
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| Co-Investigator(Kenkyū-buntansha) |
YAMAMOTO Masafumi 北海道大学, 大学院・情報科学研究科, 教授 (10322835)
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| Co-Investigator(Renkei-kenkyūsha) |
MATSUDA Ken-ichi 北海道大学, 大学院・情報科学研究科, 助教 (80360931)
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| Project Period (FY) |
2009 – 2011
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| Keywords | スピントロニクス / スピン注入 / ホイスラー合金 / 半導体 / スピントランジスタ / スピン発光ダイオード |
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| Research Abstract |
The purpose of this research project was to develop fundamental technologies for creation of viable spintronic devices, in which electron spins are utilized as an additional degree of freedom for information and storage. For that purpose we demonstrated highly-efficient spin injection from halfmetallic ferromanet of Co-based Heusler alloy into GaAs and Si. Furthermore we clarified spin-dependent transport properties through the investigation of spin lifetime and interplay between electron spins and nuclear spins in the semiconductor channels.
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