2011 Fiscal Year Final Research Report
Development of Magnetic thin film devices with large saturation magnetization and high anisotropy field with resonance frequency above 10 GHz
| Project/Area Number |
21360145
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Tokyo Institute of Technology |
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Principal Investigator |
NAKAGAWA Shigeki 東京工業大学, 大学院・理工学研究科, 教授 (60180246)
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| Project Period (FY) |
2009 – 2011
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| Keywords | 大飽和磁化 / 高磁気異方性 / FeCoB / 異方性磁界 / 高共鳴周波数 / 磁歪 / 高周波透磁率 |
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| Research Abstract |
FeCoB films prepared on Ru underlayer using oblique incidence of sputtered particles have high in-plane magnetic anisotropy H_k of 500 Oe. There is an anisotropic residual stress which is an origin of the in-plane magnetic anisotropy. Such anistotropic crystalline structures may affect to the anisotropic residual stress in FeCoB layer on Ru underlayer. B content of around 6 at.% is appropriate to induce such an anisotropic residual stress. Multilayered structure with Si/NiFe is effective to reduce Bloch type domain walls. The FeCoB films with H_k of 500 Oe revealed 9. 2 GHz of resonance frequency.
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Research Products
(17 results)
