2011 Fiscal Year Final Research Report
Three dimensional dielectrophoretic devices using high-aspect-ratio structures fabricated by proton beam writing
Project/Area Number |
21360154
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Research Category |
Grant-in-Aid for Scientific Research (B)
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Allocation Type | Single-year Grants |
Section | 一般 |
Research Field |
Electronic materials/Electric materials
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Research Institution | Shibaura Institute of Technology |
Principal Investigator |
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Co-Investigator(Kenkyū-buntansha) |
UCHIDA Satoshi 首都大学東京, 理工学研究科, 准教授 (90305417)
HASEGAWA Tadahiro 芝浦工業大学, 工学部, 准教授 (10340605)
|
Project Period (FY) |
2009 – 2011
|
Keywords | 電気 / 電子材料 |
Research Abstract |
Aiming at the development of dielectrophotic(DEP) devices working for three-dimensional trapping of micro particles, we introduced high-aspect-ratio microstructures fabricated by proton beam writing(PBW). Three issues including beam engineering, materials and processing, and device applications have been studied. Using the PBW technique with flexible micromachining capability, superior characteristics of the three-dimensional DEP devices for electric-micro filters have been successfully demonstrated.
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