2011 Fiscal Year Final Research Report
Giant isotope effect on phonon and carrier in semiconductor diamond
| Project/Area Number |
21360155
|
|---|
| Research Category |
Grant-in-Aid for Scientific Research (B)
|
| Allocation Type | Single-year Grants |
|---|
| Section | 一般 |
|---|
| Research Field |
Electronic materials/Electric materials
|
|---|
| Research Institution | National Institute of Advanced Industrial Science and Technology |
|---|
Principal Investigator |
WATANABE Hideyuki 独立行政法人産業技術総合研究所, ダイヤモンド研究ラボ, 主任研究員 (50392684)
|
|---|
| Co-Investigator(Renkei-kenkyūsha) |
NAKASHIMA Shinich 独立行政法人産業技術総合研究所, 先進パワーエレクトロニクス研究センター, 客員研究員 (20029226)
|
|---|
| Project Period (FY) |
2009 – 2011
|
| Keywords | 電気・電子材料 / ダイヤモンド / 同位体効果 |
|---|
| Research Abstract |
We succeeded in synthesizing a stack of alternating, nano-meter thick layers of isotopically enriched^<12> C and^<13> C diamonds using microwave plasma-assisted CVD with isotopically enriched methane gases. We suggested the feasibility of synthesizing a diamond superlattice comprising very thin diamond layers whose well width is as small as 1 nm. We also found that the carriers are confined due to the band gap difference in the homojunction interface. The possibility has been raised that the confinement of phonons also occurs in the isotopic diamond superlattice. We found that, currently, isotopic diamonds have a possibility to provide an effective means for facilitating the band engineering of diamond.
|
-
-
-
-
[Journal Article] Coherence of single spins coupled to a nuclear spin bath of varying density2009
Author(s)
N. Mizuochi, P. Neumann, F. Rempp, J. Beck, V. Jacques, P. Siyushev, K. Nakamura, D. J. Twitchen, H. Watanabe, S. Yamasaki, F. Jelezko, J. Wrachtrup
-
Journal Title
PHYSICAL REVIEW B
Volume: 80
Pages: 041201-141201-4
DOI
Peer Reviewed
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
