2011 Fiscal Year Final Research Report
Fabrication of normally-off GaN MISFETs for high-power application
| Project/Area Number |
21360168
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | Nagoya University |
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Principal Investigator |
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| Co-Investigator(Kenkyū-buntansha) |
KISHIMOTO Shigeru 名古屋大学, 工学研究科, 助教 (10186215)
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| Project Period (FY) |
2009 – 2011
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| Keywords | GaN / MISFET / ノーマリオフ / Al_2O_3, InGaN cap / 硫化アンモニウム処理 / gate firstプロセス |
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| Research Abstract |
Novel p-InGaN/AlGaN/GaN MISFET was proposed and normally-off operation of the MISFETs with a threshold voltage of 1. 2 V was realized. Concerning the gate insulator, ALD-grown Al_2O-3 was shown to be better than HfO-2 from the view point of transient behavior of the devices.(NH-4)-2S treatment before the gate insulator deposition and gate first process where gate insulator was deposited before ohmic contact formation was effective in decreasing the interface state density.
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