2012 Fiscal Year Final Research Report
Design of New Structure and New Material Devices by a Quantum Transport Simulator in Ultimately Scaled VLSIs
| Project/Area Number |
21360171
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | Kobe University |
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Principal Investigator |
OGAWA Matsuto 神戸大学, 大学院・工学研究科, 教授 (40177142)
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| Co-Investigator(Kenkyū-buntansha) |
SOUMA Satofumi 神戸大学, 大学院・工学研究科, 准教授 (20432560)
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| Project Period (FY) |
2009 – 2012
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| Keywords | 量子力学的シミュレーション / 非平衡グリーン関数法 / 原子レベルシミュレーション / 第一原理バンド構造計算 |
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| Research Abstract |
：In recent years, advances in LSI technology based on the continuous scaling of metal-oxide-semiconductor (MOS) field-effect transistors (FETs) has enabled improvements in the switching speed，density，functionality, and cost of microprocessors. However，such downsizing now becomes a cause of reducing the device performance due to increasing leakage current and short channel effects. In this project，we have investigated, making use of a newly developed quantum transport simulator, the effectiveness of using the InAs/Si hetero-junction nanowire (NW) as a solution to the above problem，and influence of strain caused byhetero-junction on tunneling characteristics through hetero interface. As a result, the simulator enabled us to find that the InAs p-i-n structure shows most favorable characteristics in both the on-current and the sub-threshold slope and the p-Si-i-Si-n-InAs structure is the runner-up.
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