2011 Fiscal Year Final Research Report
High-efficiency thermoelectric devices with Si nanostructures and their measurement techniques
| Project/Area Number |
21360336
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Structural/Functional materials
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| Research Institution | Shizuoka University |
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Principal Investigator |
IKEDA Hiroya 静岡大学, 電子工学研究所, 准教授 (00262882)
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| Co-Investigator(Kenkyū-buntansha) |
ISHIDA Akihiro 静岡大学, 工学部, 教授 (70183738)
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| Project Period (FY) |
2009 – 2011
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| Keywords | 熱電変換材料 / シリコンナノ構造 / ゼーベック係数 / SOI基板 / KFM(表面電位顕微鏡) |
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| Research Abstract |
Our research goals are the enhancement of Si thermoelectric characteristics by nanosturcturing and the construction of a novel technique characterizing the nanostructured materials. We found that Seebeck coefficient(thermoelectromotive force at a temperature deference of 1OC) of ultrathin Si is ruled by an impurity band and that Seebeck coefficient is controllable by external bias. Moreover, We have successfully obtained the Si Seebeck coefficient by surface-potential microscopy.
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