2011 Fiscal Year Final Research Report
Generation of ccryoplasma and its application to materials processing
| Project/Area Number |
21360356
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Material processing/treatments
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| Research Institution | The University of Tokyo |
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Principal Investigator |
TERASHIMA Kazuo 東京大学, 大学院・新領域創成科学研究科, 教授 (30176911)
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| Project Period (FY) |
2009 – 2011
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| Keywords | プラズマ処理 / レーザー加工 |
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| Research Abstract |
In this project, continuing to thermal plasma and low-temperature plasma, plasma with a third range of gas temperatures Tg<300 K including plasma gas temperature below freezing point was developed. In the following, we call this plasma "cryoplasma" to distinguish it from conventional thermal and low-temperature plasmas. For example, we have studied the continuous gas temperature-dependent generation and of a cryoplasma jet in a broader temperature range from 296 down to 5 K. The optical emission and I-V characteristics of the cryoplasma were also measured and analyzed. Moreover, plasma processing at cryogenic temperatures tremendously suppresses the depth penetration of plasma radical species within nanoporous materials to demonstrate that this confining effect is surprisingly unrelated to changes in the phase diffusivity of radical species gas, but is determined by the increase of the sticking coefficient and the radical recombination and reaction factors, favoring an early irreversible surface adsorption of the plasma radical species.
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