2011 Fiscal Year Final Research Report
Crystal growth mechanism of SiC under metastable equilibrium
| Project/Area Number |
21360371
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Metal making engineering
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| Research Institution | Kwansei Gakuin University |
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Principal Investigator |
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| Co-Investigator(Kenkyū-buntansha) |
YOSHIYA Masato 大阪大学, 工学研究科, 准教授 (00399601)
YASUDA Hideyuki 大阪大学, 工学研究科, 教授 (60239762)
NAKASHIMA Hideharu 九州大学, 総合理工学部, 教授 (80180280)
HATA Satoshi 九州大学, 総合理工学部, 准教授 (60264107)
IKEDA Kenichi 九州大学, 総合理工学部, 助教 (20335996)
FUJIWARA Hiroyasu 京都大学, エネルギー科学研究科, 准教授 (10238602)
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| Project Period (FY) |
2009 – 2011
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| Keywords | 第一原理計算 |
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| Research Abstract |
Metastable Solvent Epixaty, MSE, is the cheep and stable process of 4H-SiC, which has been expected to be a next generation power device materials. For clarify this novel process, first principles calculations has been performed. Phonon calculations suggest the stability of 4H-SiC. Surface energy calculations shows that the (0001) surface is the most stable in Si-rich environment. Low activation energy of surface diffusion on (0001) C-face drives the flat growth of this surface.
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Research Products
(6 results)
