• Search Research Projects
  • Search Researchers
  • How to Use
  1. Back to project page

2011 Fiscal Year Final Research Report

Crystal growth mechanism of SiC under metastable equilibrium

Research Project

  • PDF
Project/Area Number 21360371
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Research Field Metal making engineering
Research InstitutionKwansei Gakuin University

Principal Investigator

NISHITANI Shigeto  関西学院大学, 理工学部, 教授 (50192688)

Co-Investigator(Kenkyū-buntansha) YOSHIYA Masato  大阪大学, 工学研究科, 准教授 (00399601)
YASUDA Hideyuki  大阪大学, 工学研究科, 教授 (60239762)
NAKASHIMA Hideharu  九州大学, 総合理工学部, 教授 (80180280)
HATA Satoshi  九州大学, 総合理工学部, 准教授 (60264107)
IKEDA Kenichi  九州大学, 総合理工学部, 助教 (20335996)
FUJIWARA Hiroyasu  京都大学, エネルギー科学研究科, 准教授 (10238602)
Project Period (FY) 2009 – 2011
Keywords第一原理計算
Research Abstract

Metastable Solvent Epixaty, MSE, is the cheep and stable process of 4H-SiC, which has been expected to be a next generation power device materials. For clarify this novel process, first principles calculations has been performed. Phonon calculations suggest the stability of 4H-SiC. Surface energy calculations shows that the (0001) surface is the most stable in Si-rich environment. Low activation energy of surface diffusion on (0001) C-face drives the flat growth of this surface.

  • Research Products

    (6 results)

All 2012 2011 2010 2009

All Journal Article (1 results) Presentation (4 results) Book (1 results)

  • [Journal Article] 擬調和振動子近似による振動自由エネルギーの第一原理計算2009

    • Author(s)
      西谷滋人, 竹田諒平, 石井英樹, 山本洋佑, 金子忠昭
    • Journal Title

      日本金属学会誌

      Volume: 第73巻8号 Pages: 566-570

  • [Presentation] Yosuke Yamamoto, and Tadaaki Kaneko2012

    • Author(s)
      Shigeto R. Nishitani
    • Organizer
      New Solution Method for SiC Crystal Growth(Invited talk)
    • Place of Presentation
      Orland, Florida(USA)
    • Year and Date
      2012-03-13
  • [Presentation] 準安定溶媒エピタキシー法によるSiCの成長(oral)2011

    • Author(s)
      西谷滋人, 山本洋佑, 藤原弘康, 金子忠昭
    • Organizer
      合金状態図第172委員会第21回委員会・研究会
    • Place of Presentation
      伊藤忠テクノソリューションズ(株)・日本
    • Year and Date
      2011-04-21
  • [Presentation] SiCマイクロパイプ生成の環境依存性(poster)2010

    • Author(s)
      戸賀瀬健介, 西谷滋人, 金子忠昭
    • Organizer
      2010年日本金属学会秋季大会
    • Place of Presentation
      札幌・日本
    • Year and Date
      2010-09-25
  • [Presentation] Metastable Solvent Epitaxy of SiC ; another diamond synthetics2009

    • Author(s)
      S R. Nishitani, T. Kaneko and N. Ohtani
    • Organizer
      Thermec 09'
    • Place of Presentation
      Berlin, Germany
    • Year and Date
      2009-08-27
  • [Book] Metastable Solvent Epitaxy of SiC, the Other Diamond Synthetics2011

    • Author(s)
      Shigeto R. Nishitani, Kensuke Togase, Yosuke Yamamoto, Hiroyasu Fujiwara, and Tadaaki Kaneko, Moumita Mukherjee
    • Total Pages
      53-68
    • Publisher
      InTech

URL: 

Published: 2013-07-31  

Information User Guide FAQ News Terms of Use Attribution of KAKENHI

Powered by NII kakenhi