2011 Fiscal Year Final Research Report
The electron-phonon interaction resulting surface modification triggered by the low-energy highly-charged-ion
| Project/Area Number |
21510108
|
|---|
| Research Category |
Grant-in-Aid for Scientific Research (C)
|
| Allocation Type | Single-year Grants |
|---|
| Section | 一般 |
|---|
| Research Field |
Nanostructural science
|
|---|
| Research Institution | Okayama University of Science |
|---|
Principal Investigator |
|
|---|
| Co-Investigator(Renkei-kenkyūsha) |
YAMAZAKI Yasunori 東京大学, 特任教授 (30114903)
SAITO Hiroshi 岡山理科大学, 名誉教授 (20013526)
OHISHI Masakazu 岡山理科大学, 名誉教授 (40068911)
|
|---|
| Project Period (FY) |
2009 – 2011
|
| Keywords | HCI(多価イオン) / 計算機シミュレーション / 電子・フォノン相互作用 / コヒーレントフォノン / 表面改質 / 近接場効果 |
|---|
| Research Abstract |
The low-energy highly charged ion(HCI) produces hillocks on a solid surface, which are mesa-like protrusions as the result of electronic excitation due to HCI. Our aim has been to make it clear how generally the electron-phonon interaction can explain the formation mechanism, for a wide range of target materials. The first step of synergetic reaction of target atoms may be to form the fast phonon, which is already known in semimetal and semiconductor. This is the optical phonon where intraplane motion of atoms is characteristic. The second step is the acoustic phonon caused by the entering HCI. These two types of successive phonons may produce the hillocks by a low-energy HCI, at least in the case of a semimetal.
|
