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2011 Fiscal Year Final Research Report

Development of particle detector using a new generation compound

Research Project

  • PDF
Project/Area Number 21540292
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field Particle/Nuclear/Cosmic ray/Astro physics
Research InstitutionIwate University

Principal Investigator

NARITA Shinya  岩手大学, 工学部, 准教授 (80322965)

Co-Investigator(Renkei-kenkyūsha) YAMADA Syoji  北陸先端科学技術大学院大学, ナノマテリアルテクノロジーセンター, 教授 (00262593)
Project Period (FY) 2009 – 2011
Keywords半導体検出器 / 放射線計測 / 放射線損傷 / 窒化ガリウム / 酸化亜鉛
Research Abstract

We developed a radiation detector using new generation compound semiconductor such as gallium nitride (GaN) and zinc oxide (ZnO). We fabricated the diodes with these materials and investigated the electrical properties and the performance in detection of incident particles. As a result, we succeeded in developing sensors with a high sensitivity for .-ray and X-ray. In addition, we irradiated the diodes with high energy proton beam, and investigated the effects on their electrical properties. We found that the electrical properties of the diodes did not change significantly under fluences up to 10^<15> p/cm^2. The result obtained in this study suggests the radiation hardness of these materials.

  • Research Products

    (7 results)

All 2011 2010 2009

All Journal Article (4 results) (of which Peer Reviewed: 1 results) Presentation (3 results)

  • [Journal Article] Fabrication and characterization of a ZnO X-ray sensor using a high-resistivity ZnO single crystal grown by the hydrothermal method2011

    • Author(s)
      Haruyuki Endo, Tetsuya Chiba, Kazuyuki Meguro, Kyo Takahashi, Mitsuru Fujisawa, Shigeki Sugimura, Shinya Narita, Yasube Kashiwaba, Eiichi Sato
    • Journal Title

      Nucl. Instrum. Methods A

      Volume: 655 Pages: 15-18

    • Peer Reviewed
  • [Journal Article] Development of Radiation Sensor Based on Pt/ZnO Schottky Diode2011

    • Author(s)
      S. Narita, Y. Nishibori, H. Naito, H. Ito, H. Endo, T. Chiba, Y. Sakemi, M. Itoh, and H. Yoshida
    • Journal Title

      2011 IEEE NSS-MIC Conference Record

      Pages: 1729-1729

  • [Journal Article] Proton Irradiation Effects for GaN Schottky Diode2010

    • Author(s)
      S. Narita, D. Ichinose, Y. Nishibori, T. Hitora, E. Yamaguchi, Y. Sakemi, T. Itoh, H. Yoshida
    • Journal Title

      CYRIC ANNUAL REPORT

      Pages: 25-29

  • [Journal Article] Evaluation of Radiation Hardness for Nitride Semiconductor2009

    • Author(s)
      S. Narita, Y. Chiba, D. Ichinose, T. Hitora, E. Yamaguchi, Y. Sakemi, T. Itoh, H. Yoshida
    • Journal Title

      CYRIC ANNUAL Report

      Pages: 56-60

  • [Presentation] Development of Radiation Sensor Based on Pt/ZnO Schottky Diode2011

    • Author(s)
      S. Narita, Y. Nishibori, H. Naito, H. Endo, T. Chiba, Y. Sakemi, M. Itoh, H. Yoshida
    • Organizer
      2011 IEEE Nuclear Science Symposium and Medical Imaging Conference
    • Place of Presentation
      Valencia, Spain
    • Year and Date
      2011-10-26
  • [Presentation] 窒化物半導体によるダイオード素子の特性評価2010

    • Author(s)
      西堀義美,内藤裕貴,一瀬大介,成田晋也,山田弘,人羅俊実,山口栄一,山田省二
    • Organizer
      平成22年度電気関係学会東北支部連合大会
    • Place of Presentation
      八戸工業大学
    • Year and Date
      2010-08-27
  • [Presentation] 陽子線照射によるIII族窒化物半導体の放射線耐性評価2009

    • Author(s)
      一瀬大介、成田晋也、西堀義美、山田弘、人羅俊実、山口栄一、酒見泰寛、伊藤正俊、吉田英智
    • Organizer
      平成21年度電気関係学会東北支部連合大会
    • Place of Presentation
      東北文化学園大学
    • Year and Date
      2009-08-21

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Published: 2013-07-31  

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