2011 Fiscal Year Final Research Report

Cross-sectional scanning tunneling microscopy observations for interface structures of ultra-thin films on Si surfaces using cleavage methods

Research Project

Project/Area Number	21540322
Research Category	Grant-in-Aid for Scientific Research (C)
Allocation Type	Single-year Grants
Section	一般
Research Field	Condensed matter physics I
Research Institution	Nara Institute of Science and Technology
Principal Investigator	HATTORI Ken 奈良先端科学技術大学院大学, 物質創成科学研究科, 准教授 (00222216)
Research Collaborator	DAIMON Hiroshi 奈良先端科学技術大学院大学, 物質創成科学研究科, 教授 UEDA Kazuyuki 豊田工業大学, 名誉教授 YONEI Hitoshi 奈良先端科学技術大学院大学, 物質創成科学研究科, 博士課程前期課程 TACHIBANA Kazuya 奈良先端科学技術大学院大学, 物質創成科学研究科, 博士課程前期課程
Project Period (FY)	2009 – 2011
Keywords	走査トンネル顕微鏡 / へき開法 / 断面 / シリコン
Research Abstract	We have developed a new cleaving method to observe cross-sectional structures of interface regions including thin film systems grown on silicon-wafer surfaces using scanning tunneling microscope. This method is much easier than the previous ones and allows to prepare wide and flat cleaved surfaces. We cleaved a silicon wafer with the metal-oxide-semiconductor structure in vacuum by the method, and microscopically observed the interface region. We succeeded to identify the metal and semiconductor cross-sectional regions combined with the scanning tunneling spectroscopy.

(6 results)