2011 Fiscal Year Final Research Report
Investigation of void formation mechanism beneath thin AlN layers grown on foreign substrates
| Project/Area Number |
21560009
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | Tokyo University of Agriculture and Technology |
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Principal Investigator |
KUMAGAI Yoshinao 東京農工大学, 大学院・工学研究院, 准教授 (20313306)
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| Project Period (FY) |
2009 – 2011
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| Keywords | エピタキシャル成長 / 窒化アルミニウム / 自立基板 |
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| Research Abstract |
Thin AlN layers were grown on sapphire and SiC substrates with various orientations at 1065℃by hydride vapor phase epitaxy. Then, heat-treatment of the substrates was performed in NH_3 added H_2 flow up to 1450℃. It was found that hydrogen diffuses through the thin AlN layer to the interface via dislocations and reacts with the substrate, which yields voids beneath the thin AlN layer. Self-separation of thick AlN layers, subsequently grown at 1450℃after the void formation, occurred during post-growth cooling when segment ratio of voids at interface was about 50%
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