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2011 Fiscal Year Final Research Report

Determination of absolute value of vacancy concentration for silicon crystal using low-temperature ultrasonic measurement

Research Project

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Project/Area Number 21560012
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field Applied materials science/Crystal engineering
Research InstitutionNiigata University

Principal Investigator

KANETA Hiroshi  新潟大学, 超域学術院, 教授 (30418131)

Co-Investigator(Renkei-kenkyūsha) GOTO Terutaka  新潟大学, 自然科学研究科, 教授 (60134053)
NEMOTO Yuichi  新潟大学, 自然科学系, 准教授 (10303174)
Project Period (FY) 2009 – 2011
Keywordsシリコン / 原子空孔 / 絶対濃度 / 超音波
Research Abstract

Regarding the sample preparation in this study performed by the annealing furnace in the laboratory of university-level cleanness, we have found the following two problems :(1) The cleanness of the laboratory is totally inadequate in order to anneal well-cleaned samples in the contamination-free ambient.(2) The cooling(quenching) speed is insufficient to freeze the vacancies which are in thermal equilibrium in the annealing. We have found that the best way to resolve these problems is to prepare the samples by using the apparatuses and facilities in silicon wafer manufacturing company. The level of the cleanness of the apparatus and the clean room is far higher than that of those in the university. The quenching with sufficiently high speed can also be realized by the rapid thermal annealer(RAT) adopted in silicon wafer manufacturing. In this case however, we have to deal with the silicon wafers of surface orientation<001> and the thickness thinner than 0. 8 mm, instead of the block-shaped samples we first considered for the experiment. In this case, we also have to totally change the regular condition of the ultrasonic measurement into a special one, where we measure the elastic constantC11 by using the longitudinal sound wave propagating along<001> direction through the very thin sample(wafer). We have shown that this method of measurement for the elastic softening is possible. Sample preparation using the RTA in silicon wafer manufacturer is now in progress.

  • Research Products

    (17 results)

All 2011 2010 2009

All Journal Article (5 results) (of which Peer Reviewed: 4 results) Presentation (8 results) Patent(Industrial Property Rights) (4 results) (of which Overseas: 3 results)

  • [Journal Article] Quadrupole Wffects of Vacancy Orbital in Boron-Doped Silicon2011

    • Author(s)
      Baba, T. Goto, Y. Nagai, M. Mitsumoto, M. Akatsu, H. Watanabe, K. Mitsumoto, T. Ogawa, Y. Nemoto, and H. Yamada-Kaneta
    • Journal Title

      J. Phys. Soc. Jpn.

      Volume: 80 Pages: 094601

    • Peer Reviewed
  • [Journal Article] Second Harmonic Vibrational Mode of Substitional Carbon in Cast-Grown Multicrystalline Silicon2011

    • Author(s)
      H. Ono and H. Yamada-Kaneta
    • Journal Title

      Appl. Phys. Express

      Volume: 4 Pages: 051401

    • Peer Reviewed
  • [Journal Article] Practical method and physics of evaluation for vacancy concentration of silicon crystals by means of low-tempature elastic softening2010

    • Author(s)
      H. Yamada-Kaneta, S. Baba, Y. Nagai, M. Akatsu, K. Mitsumoto, T. Yanase, K. Okabe, Y. Ono, Y. Nemoto, T. Goto
    • Journal Title

      ECS Transactions

      Volume: 33 Pages: 63-72

    • Peer Reviewed
  • [Journal Article] Practical method and physics of evaluation for vacancy concentration of silicon crystals by means of low-temperature elastic softening2010

    • Author(s)
      H. Yamada-Kaneta, S. Baba, Y. Nagai, M. Akatsu, K. Mitsumoto, T. Yanase, K. Okabe, Y. Ono, Y. Nemoto, T. Goto
    • Journal Title

      ECS Fall Meeting October

      Volume: 218 Pages: 10-15

  • [Journal Article] Ultrasonic Study of Vacancy in Single Crystal Silicon at Low Temperatures2009

    • Author(s)
      M. Akatsu, T. Goto, H. Yamada-Kaneta, H. Watanabe, Y. Nemoto, K. Mitsumoto, S. Baba, Y. Nagai, S. Nakamura
    • Journal Title

      J. Phys. Conf. Series

      Volume: 150 Pages: 0420021-4

    • Peer Reviewed
  • [Presentation] ボロン添加シリコンの原子空孔軌道と横波弾性定数C44の異方的な磁場依存性2011

    • Author(s)
      馬場正太郎,赤津光洋,三本啓輔,小松悟,堀江邦彦,根本祐一,金田寛A,後藤輝孝
    • Organizer
      日本物理学会2011年秋季大会
    • Place of Presentation
      富山大学五福キャンパス
    • Year and Date
      20110921-24
  • [Presentation] 低温超音波計測によるボロン添加シリコン中の原子空孔観測2010

    • Author(s)
      小松悟,馬場正太郎,赤津光洋,三本啓輔,小川貴史,根本祐一,金田寛,後藤輝孝
    • Organizer
      第6回シリコンフォーラム岡山会議
    • Year and Date
      20101114-17
  • [Presentation] Electric quadrupole effects of vacancyorbital in boron-doped silicon2010

    • Author(s)
      S. Baba, Y. Nagai, M. Akatsu, S. Komatsu, K. Mitsumoto, T. Ogawa, Y. Nemoto, H. Yamada-Kaneta, T. Goto
    • Organizer
      第6回シリコンフォーラム岡山会議
    • Year and Date
      20101114-17
  • [Presentation] Practical evaluation of vacansy concentration in sillicon crystals and wafers by ultrasonic measurements with organic P(VDF/TrFE) transducers2010

    • Author(s)
      K. Okabe, K. Mitsumoto, T. Yanase, M. Akatsu, S. Baba, S. Komatsu, Y. Ono, Y. Nemoto, H. Y. Kaneta, T. Goto
    • Organizer
      第6回シリコンフォーラム岡山会議
    • Year and Date
      20101114-17
  • [Presentation] Ab-initio evaluation of quadrupole moment associated with silicon mono-vacancy(シリコン単原子空孔における電気四極子の第一原理的評価)2010

    • Author(s)
      Takafumi Ogawa, Kenji Tsuruta, Hiroshi Iyetomi, Yuichi Nemoto, Hiroshi Yamada-Kaneta, Terutaka Goto
    • Organizer
      第6回シリコンフォーラム岡山会議
    • Year and Date
      20101114-17
  • [Presentation] DFT計算によるシリコン単原子空孔の局在電子軌道の解析2010

    • Author(s)
      小川貴史,鶴田健二,家富洋,根本祐一,金田寛,後藤輝孝
    • Organizer
      日本物理学会秋季大会
    • Place of Presentation
      大阪府立大学中百舌鳥キャンパス
    • Year and Date
      20100923-26
  • [Presentation] 第一原理分子動力学法よるシリコン原子空孔の電子状態解析2010

    • Author(s)
      小川貴史,鶴田健二,家富洋,根本祐一,金田寛,後藤輝孝
    • Organizer
      第24回分子シミュレーション討論会
    • Place of Presentation
      福井県県民ホール
    • Year and Date
      2010-11-25
  • [Presentation] 第一原理計算によるシリコン単原子空孔の局在電子状態2010

    • Author(s)
      小川貴史,鶴田健二,家富洋,根本祐一,金田寛,後藤輝孝
    • Organizer
      第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学文教キャンパス
    • Year and Date
      2010-09-16
  • [Patent(Industrial Property Rights)] シリコンウェーハ中に存在する原子空孔の定量評価装置および方法2011

    • Inventor(s)
      後藤輝孝、根本祐一、金田寛、宝耒正隆
    • Industrial Property Rights Holder
      国立大学法人新潟大学、株式会社SUMCO
    • Industrial Property Number
      特許、米国出願登録番号: 8037761韓国出願登録番号:10-1048637
    • Filing Date
      2011-10-18
    • Overseas
  • [Patent(Industrial Property Rights)] CZ法によるSi単結晶インゴットの製造方法2011

    • Inventor(s)
      後藤輝孝、根本祐一、金田寛、宝耒正隆
    • Industrial Property Rights Holder
      国立大学法人新潟大学、株式会社SUMCO
    • Industrial Property Number
      特許、韓国出願登録番号: 10-1032593
    • Acquisition Date
      2011-04-26
    • Overseas
  • [Patent(Industrial Property Rights)] シリコンウェーハ中に存在する原子空孔濃度の定量評価方法、シリコンウェーハの製造方法、および当該製造方法により製造したシリコンウェーハ2010

    • Inventor(s)
      後藤輝孝、金田寛、根本祐一、赤津光洋
    • Industrial Property Rights Holder
      国立大学法人新潟大学
    • Industrial Property Number
      特許、特願2010-529866(日本)
    • Filing Date
      2010-08-19
  • [Patent(Industrial Property Rights)] シリコンウェーハ中に存在する原子空孔濃度の定量評価方法、シリコンウェーハの製造方法、および当該製造方法により製造したシリコンウェーハ2010

    • Inventor(s)
      後藤輝孝、金田寛、根本祐一、赤津光洋
    • Industrial Property Rights Holder
      国立大学法人新潟大学
    • Industrial Property Number
      PCT/JP2010/063967(PCT),第99129214(台湾)
    • Filing Date
      2010-08-31
    • Overseas

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Published: 2013-07-31  

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