2011 Fiscal Year Final Research Report
High growth-rate hydride-vapor-phase of aluminum nitride
| Project/Area Number |
21560014
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | Mie University |
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Principal Investigator |
MIYAKE Hideto 三重大学, 大学院・工学研究科, 准教授 (70209881)
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| Co-Investigator(Kenkyū-buntansha) |
HIRAMATSU Kazumasa 三重大学, 大学院・工学研究科, 教授 (50165205)
NAOI Hiroyuki 和歌山工業高等専門学校, 電気情報工学科, 准教授 (10373101)
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| Project Period (FY) |
2009 – 2011
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| Keywords | 窒化物半導体 / 窒化アルミニウム / AlN / ハイドライド気相成長法 / HVPE / 選択横方向成長 / 加工基板 / エッチピット |
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| Research Abstract |
AlN is an attractive substrate for short-wavelength optoelectronics devices based on AlGaN. For growth of AlN and AlGaN, lateral overgrowth using a patterned substrate is useful for control of dislocation penetration, because selective-area growth with masks, such as SiO2, cannot be applied. In this study, thick AlN films were grown by HVPE on AlN/sapphire stripe patterned seeds with triangular shape in cross section, and the TDs density on the surface of HVPE-grown films was reduced one order of magnitude from a AlN film without pattern seeds. We also have investigated threading dislocations(TDs) in epitaxial AlN films by etch-pit method. Epitaxial AlN films were etched by mixed acid solution(KOH+ NaOH). The etch-pits were classified into TD groups by those sizes.
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