2011 Fiscal Year Final Research Report

Improvement in th e reli ability of super low power loss SiC static induction devices

Research Project

Project/Area Number	21560294
Research Category	Grant-in-Aid for Scientific Research (C)
Allocation Type	Single-year Grants
Section	一般
Research Field	Power engineering/Power conversion/Electric machinery
Research Institution	University of Yamanashi
Principal Investigator	YAN0 Koji 山梨大学, 大学院・医学工学総合研究部, 教授 (90252014)
Co-Investigator(Renkei-kenkyūsha)	TANAKA Yasunori 産業技術総合研究所, 先進パワーエレクトロニクス研究センター, 主任研究員 (20357453) YATSUO Tsutomu 産業技術総合研究所, 先進パワーエレクトロニクス研究センター, 非常勤研究員 (10399503)
Project Period (FY)	2009 – 2011
Keywords	パワーエレクトロニクス / パワーデバイス / ワイドバンドギャップ / SiC
Research Abstract	For SiC-static induction transistors with the buried gate structure(SiC-BGSIT), high voltage blocking tests have been performed at Ta=125℃for 1000 hours. 1000V was applied between the drain and source electrode in the test. Through the test, any degradation in the electrical characteristics was not observed. This result means that the appropriate device process is done in the channel formation, and expects the high reliability of the SiC-BGSITs.

(1 results)