2011 Fiscal Year Final Research Report
Preparation of High-quality Bi-2223 Single Crystal Thin Film for Intrinsic Josephson Junctions used in THz Emission
| Project/Area Number |
21560339
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Kanazawa Institute of Technology |
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Principal Investigator |
ENDO Kazuhiro 金沢工業大学, ものづくり研究所, 教授 (50356606)
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| Co-Investigator(Kenkyū-buntansha) |
TACHIKI Masashi 筑波大学, 大学院・数理物質科学研究科, 研究員 (20028111)
ARISAWA Shunichi (独)物質・材料研究機構, 超伝導物性ユニット, 主幹研究員 (00354340)
UCHIDA Takashi 防衛大学校, 電気情報学群電気電子工学科, 教授 (50531802)
TACHIKI Takashi 防衛大学校, 電気情報学群電気電子工学科, 准教授 (60531796)
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| Project Period (FY) |
2009 – 2011
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| Keywords | ビスマス系超伝導酸化物 / Bi-2223 / 薄膜 / MOCVD / テラヘルツ素子 / 固有ジョセフソン接合 |
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| Research Abstract |
Terahertz electromagnetic waves are expected to be applied for "safety and security" devices such as detectors of cancer cells and non-destructive inspection tools instead of X-rays. The theory on terahertz coherent emission from intrinsic Josephson junctions has been proposed and recently demonstrated for bulk crystals of Bi-2212 superconducting materials. However, the intensity of emission is weak for practical use. In order to solve the "low intensity problem" new device structures using thin films are proposed. To approach and demonstrate this idea, high-quality non c-axis oriented Bi-2223 thin films are prepared by metalorganic chemical vapor deposition.
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