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2011 Fiscal Year Final Research Report

Fabrication of planar-type GaN-based surface emitting devices

Research Project

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Project/Area Number 21560361
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field Electron device/Electronic equipment
Research InstitutionKogakuin University

Principal Investigator

HONDA Tohru  工学院大学, 工学部, 教授 (20251671)

Project Period (FY) 2009 – 2011
Keywords光デバイス / 光回路
Research Abstract

GaN-based light-emitting pixels for the micro displays require the large-scale integration and their cost-effective fabrication. In this study, GaN-based Schottky-type LEDs and their integration were investigated. I found the face-pack process was effective for their reduction of the reverse-bias leakage current. This is also effective for the increase of light-emission efficiency. I have also proposed the MgZnO-based transparent electrode for the light-emitting devices.

  • Research Products

    (25 results)

All 2012 2011 2010 2009

All Journal Article (4 results) (of which Peer Reviewed: 4 results) Presentation (20 results) Book (1 results)

  • [Journal Article] Reduction of reverse-bias leakage current in GaN-based Schottky-type light-emitting diodes by surface modification using the aluminum facepack technique2012

    • Author(s)
      Tohru Honda, Naoyuki Sakai, Shigetoshi Komiyama, Masato Hayashi and Tatsuhiro Igaki
    • Journal Title

      Physica Status Solidi(C)

      Volume: 9巻 Pages: 778-781

    • DOI

      DOI:10.1002/pssc.201100387

    • Peer Reviewed
  • [Journal Article] Surface Recombination of hexagonal GaN crystals2011

    • Author(s)
      Takeshi Onuma, Naoyuki Sakai, Takashi Okuhata, Atsushi A. Yamaguchi, and Tohru Honda
    • Journal Title

      Physica Status Solidi(C)

      Volume: 8巻 Pages: 2321-2323

    • DOI

      DOI:10.1002/pssc.201001013

    • Peer Reviewed
  • [Journal Article] Photoluminescence and photo reactivity affected by oxygen defects in crystal-oriented rutile thin film fabricated by molecular precursor method2010

    • Author(s)
      H. Nagai, S. Aoyama, H. Hara, C. Mochizuki, I. Takano, T. Honda and M. Sato
    • Journal Title

      Journal of Materials Science

      Volume: 45巻 Pages: 5704-5710

    • DOI

      DOI:10.1007/s10853-010-4640-z

    • Peer Reviewed
  • [Journal Article] Fabrication of c-axis oriented Ga-doped MgZnO-based UV transparent electrodes by molecular precursor method2010

    • Author(s)
      T, Honda, T. Oda, Y. Mashiyama, H. Hara and M. Sato
    • Journal Title

      Physica Status Solidi(C)

      Volume: 7巻 Pages: 2471-2473

    • DOI

      DOI:10.1002/pssc.200983871

    • Peer Reviewed
  • [Presentation] Low temperature of GaN on pseudo(111) Al substrates by RF-MBE2012

    • Author(s)
      M. Hayashi, T. Goto, T. Yamaguchi, T. Igaki, and T. Honda
    • Organizer
      Materials Research Society2011Fall Meeting(MRS 2011F)
    • Place of Presentation
      Boston, USA
    • Year and Date
      20121200
  • [Presentation] In-plane epitaxial relationship of(0001) sapphire grown by compound-source MBE2011

    • Author(s)
      Y. Sugiura, T. Oda, T. Onuma, T. Yamaguchi, and T. Honda
    • Organizer
      Materials Research Society 2011 Fall Meeting(MRS 2011F)
    • Place of Presentation
      Boston, USA
    • Year and Date
      20111100
  • [Presentation] Ozone treatment of the substrates for the ZnO deposition by molecular precursor method2011

    • Author(s)
      T. Oda, H. Hara, Y. Sugiura, T. Yasuno, T. Yamaguchi, M. Sato, and T. Honda
    • Organizer
      The 10th International Symposium on Advanced Technology(ISAT-10)
    • Place of Presentation
      Beijing, China
    • Year and Date
      20111100
  • [Presentation] X-ray diffraction pattern of ZnO layer grown by compound source MBE2011

    • Author(s)
      R. Amiya, Y. Sugiura, T. Yamaguchi and T. Honda
    • Organizer
      The 10th International Symposium on Advanced Technology(ISAT-10
    • Place of Presentation
      Beijing, China
    • Year and Date
      20111100
  • [Presentation] XPS spectra of c-face GaN and ZnO crystals2011

    • Author(s)
      T. Honda
    • Organizer
      The 10th International Symposium on Advanced Technology(ISAT-10)
    • Place of Presentation
      Beijing, China
    • Year and Date
      20111100
  • [Presentation] Built-in potential along the C-axis in MBE-grown GaN layers observed by angle resolved X-ray photoelectron spectroscopy2011

    • Author(s)
      T. Honda, T. Igaki, T. Yamaguchi, Y. Kumagai and A. Koukitu
    • Organizer
      The 28th North American Conference on Molecular Beam Epitaxy(NAMBE 2011)
    • Place of Presentation
      San Diego, California, USA
    • Year and Date
      20110800
  • [Presentation] Growths of InN/InGaN Pariodic Structure and Thick InGaN film using dropment elimination process by radical-beam irradiation2011

    • Author(s)
      T. Yamaguchi, T. Araki, T. Honda, E. Yoon and Y. Nanishi
    • Organizer
      The 28th North American Conference on Molecular Beam Epitaxy(NAMBE2011)
    • Place of Presentation
      San Diego, California, USA
    • Year and Date
      20110800
  • [Presentation] Comparative Study of Surface recombination in hexagonal GaN and ZnO surfaces2011

    • Author(s)
      T. Onuma, N. Sakai, T. Igaki, T. Yamaguchi, A. A. Yamaguchi and T. Honda
    • Organizer
      The 28th North American Conference on Molecular Beam Epitaxy(NAMBE2011)
    • Place of Presentation
      San Diego, California, USA
    • Year and Date
      20110800
  • [Presentation] Reduction of reverse-bias leakage current in GaN-based Schottky-type light-emitting diodes by a surface modification2011

    • Author(s)
      T. Honda, N. Sakai, S. Komiyama, M. Hayashi and T. Igaki
    • Organizer
      9th International Conference on Nitride Semiconductors(ICNS2011)
    • Place of Presentation
      Glasgow, Scotland, UK
    • Year and Date
      20110700
  • [Presentation] GaN growth on pseudo(111) Al substrates by RF-MBE2011

    • Author(s)
      T. Honda, M. Hayashi, T. Goto and T. Igaki
    • Organizer
      E-MRS ICAM IUMRS2011Spring Meeting(E-MRS)
    • Place of Presentation
      Nice, France
    • Year and Date
      20110500
  • [Presentation] Fabrication of c-axis oriented MgZnO transparent electrodes by molecular precursor method2011

    • Author(s)
      T. Oda, T. Kidu, H. Hara, Y. Sugiura, M. Sato and T. Honda
    • Organizer
      The 38th Conference on the Physics and Chemistry of Surfaces and Interfaces(PCSI-38)
    • Place of Presentation
      San Diego, California, USA
    • Year and Date
      20110100
  • [Presentation] Built-in potential in GaN crystals by angle resolved X-ray photoelectron spectroscopy2011

    • Author(s)
      T. Honda, T. Igaki, Y. Kumagai and A. Kokitu
    • Organizer
      The 38th Conference on the Physics and Chemistry of Surfaces and Interfaces(PCSI-38)
    • Place of Presentation
      San Diego, California, USA
    • Year and Date
      20110100
  • [Presentation] Surface recombination of hexagonal GaN crystals2010

    • Author(s)
      N. Sakai, T. Onuma, T. Okuhata, A. A. Yamaguchi and T. Honda
    • Organizer
      The International Workshop on Nitride semiconductors(IWN2010)
    • Place of Presentation
      Tampa Bay, Florida, USA
    • Year and Date
      20100900
  • [Presentation] GaN growth on pseudo Al substrates by molecular beam epitaxy at low temperatures2010

    • Author(s)
      T. Goto, M. Hayashi, T. Igaki, S. Taguchi and T. Honda
    • Organizer
      16th International Conference on molecular beam epitaxy(ICMBE2010)
    • Place of Presentation
      Belrin, Germany
    • Year and Date
      20100800
  • [Presentation] XPS study on(0001) and (000-1) GaN layers on sapphire substrates grown by molecular beam epitaxy2010

    • Author(s)
      T. Honda, K. Noguchi, N. Sakai, S. Taguchi, T. Goto, T. Igaki and M. Hayashi
    • Organizer
      The 3rd International Symposium on Growth of III-Nitrides
    • Place of Presentation
      Montpellier Convention Center, Montpellier, France
    • Year and Date
      20100700
  • [Presentation] Polarity control of(0001) GaN epitaxial layers grown by RF-MBE2010

    • Author(s)
      T. Igaki, M. Hayashi, T. Goto, S. Taguchi and T. Honda
    • Organizer
      The 37th International Symposium on Compound Semiconductors(ISCS2010)
    • Place of Presentation
      Takamatsu Symbol Tower, Kagawa, Japan
    • Year and Date
      20100600
  • [Presentation] Surface Modification of(0001) GaN and its application to RGB pixels based on UV Schottky-type LEDs2010

    • Author(s)
      T. Honda, N. Sakai and T. Nozaki
    • Organizer
      8th International Symposium on Semiconductor Light Emitting Devices(ISSLED2010)
    • Place of Presentation
      Peking University, Beijing, China
    • Year and Date
      20100500
  • [Presentation] Fabrication of c-axis oriented MgZnO transparent electrode by molecular precursor method2010

    • Author(s)
      T. Oda, H. Hara, C. Mochizuki, M. Sato and T. Honda
    • Organizer
      8th International Symposium on Semiconductor Light Emitting Devices(ISSLED2010)
    • Place of Presentation
      Peking University, Beijing, China
    • Year and Date
      20100500
  • [Presentation] Surface analysis of Ga-and N-polar GaN by angle resolved X-ray photoelectron spectroscopy2010

    • Author(s)
      T. Honda, K. Noguchi, Y. Kumagai and A. Koukitu
    • Organizer
      The 37th International Conference on Physics and Chemistry of Semiconductor Interfaces(PCSI37)
    • Place of Presentation
      New Mexico, USA
    • Year and Date
      20100100
  • [Presentation] XPS Spectra of(0001) and (000-1) GaN Surfaces2009

    • Author(s)
      K. Noguchi, T. Nozaki, N. Sakai, Y. Kumagai, A. Koukitu and T. Honda
    • Organizer
      The 8th International Conference on Nitride Semiconductors(ICNS-8)
    • Place of Presentation
      Jeju, Korea
    • Year and Date
      20091000
  • [Book] 電子デバイスの基礎と応用2011

    • Author(s)
      長谷川文夫, 本田徹
    • Total Pages
      235
    • Publisher
      産業図書出版

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Published: 2013-07-31  

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