2011 Fiscal Year Final Research Report

Commercially adaptable technology on shallow junction of silicon by ultra-low energy ion implantation

Research Project

Project/Area Number	21560381
Research Category	Grant-in-Aid for Scientific Research (C)
Allocation Type	Single-year Grants
Section	一般
Research Field	Electron device/Electronic equipment
Research Institution	National Institute of Advanced Industrial Science and Technology
Principal Investigator	YAMAMOTO Kazuhiro 独立行政法人産業技術総合研究所, 計測フロンティア研究部門, 主任研究員 (90358292)
Project Period (FY)	2009 – 2011
Keywords	イオン注入 / シリコン / ボロン / 超低エネルギー / 極浅接合
Research Abstract	The ultra-low energy mass-separated boron ion implantation technique under the ion energy of 500 eV of silicon in the vacuum of 10^<-5> Pa, which is commercially adaptable, was developed in order to form the shallow doping layer. The implantation depth less than 15 nm was achieved by the ion with the energy less than 300 eV.