Study on spin tunnel junctions using strong correlated oxide films for spin torque transfer

2011 Fiscal Year Final Research Report

• Project/Area Number: 21560707
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Inorganic materials/Physical properties
• Research Institution: National Institute of Advanced Industrial Science and Technology
• Principal Investigator: SATO Hiroshi 独立行政法人産業技術総合研究所, 電子光技術研究部門, 研究チーム長 (50357141)
• Co-Investigator(Renkei-kenkyūsha): KONOTO Makoto 産業技術総研究所, ナノスピントロニクス研究センター, 研究員 (80425735)
• Project Period (FY): 2009 – 2011
• Keywords: 強相関酸化物 / ハーフメタル / 磁性トンネル接合 / スピン注入磁化反転

Research Abstract

We have developed fabrication process for the tunnel junctions with sub-micron dimensions using strong correlated oxide films toward the spin torque transfer. La_0.6Sr_0.4MnO_3(50nm) was deposited on the SrTiO3 substrate was patterned into 200nm×160nm by electron beam direct writing method and by Ar ion milling. We applied the pattern fabrication method to the electrolyte-gated field effect transistor(FET) using Nd_0.4Sm_0.6NiO_3 thin films. Fabricated transistors showed the Metal-Insulator Transition by changing electric field at room temperature.

Research Products

• [Journal Article] Strain-Mediated Phase Control and Electrolyte-Gating of Electron-Doped Manganites (2011)
  • Author(s): Ping-Hua Xiang, Shutaro Asanuma, Hiroyuki Yamada, Isao H. Inoue, Hiroshi Sato, Hiroshi Akoh, Akihito Sawa, Kazunori Ueno, Hongtao Yuan, Hidekazu Shimotani, Masashi Kawasaki, Yoshihiro Iwasa
  • Journal Title: ADVANCED MATERIALS Volume: 23巻 Pages: 5822-5287
  • DOI: DOI:10.1002/adma.201102968
  • Peer Reviewed
• [Journal Article] Tuning of the metal-insulator transition in electrolyte-gated NdNiO_3 thin films (2010)
  • Author(s): S. Asanuma, P.-H. Xiang, H. Yamada, H. Sato, I. H. Inoue, H. Akoh, A. Sawa, K. Ueno, H. Shimotani, H. Yuan, M. Kawasaki, and Y. Iwasa
  • Journal Title: Applied Physics Letters Volume: 97巻 Pages: 142110-1-142110-3
  • DOI: DOI:10.1063/1.3496458
  • Peer Reviewed
• [Presentation] Insulator-to-Metal Transition in Manganite by Electric Double Layer Gating (2011)
  • Author(s): Xiang Ping-Hua、浅沼周太郎、山田浩之、井上公、佐藤弘、赤穗博司、澤彰仁、上野和紀、Yuan Hongtao、下谷秀和、川崎雅司、岩佐義宏
  • Organizer: 18th International Workshop on Oxide Electronics
  • Place of Presentation: Marriot Napa Valley Hotel and Spa(Napa, CA, USA)
  • Year and Date: 2011-09-26
• [Presentation] Electric field control of the metal-insulator transition in electrolyte-gated(Nd, Sm) NiO3 thin films (2011)
  • Author(s): 浅沼周太郎、Xiang Ping-Hua、山田浩之、佐藤弘、井上公、赤穗博司、澤彰仁、上野和紀、川崎雅司、岩佐義宏
  • Organizer: MRS spring meeting
  • Place of Presentation: San Francisco, USA
  • Year and Date: 2011-04-26
• [Presentation] 電気二重層FETによるNdNiO_3の金属-絶縁体転移の電界制御 (2010)
  • Author(s): 浅沼周太郎、向平華、山田浩之、佐藤弘、井上公、赤穗博司、澤彰仁、上野和紀、川崎雅司、岩佐義宏
  • Organizer: 応用物理学会
  • Place of Presentation: 長崎大学
  • Year and Date: 2010-09-15
• [Presentation] PLD法によるNd1-xSmxNiO3薄膜の製膜と物性評価 (2010)
  • Author(s): 浅沼周太郎、Xiang Ping-Hua、山田浩之、井上公、佐藤弘、澤彰仁、赤穗博司
  • Organizer: 応用物理学会
  • Place of Presentation: 東海大学
  • Year and Date: 2010-03-18
• [Patent(Industrial Property Rights)] ペロブスカイト型の複合酸化物をチャンネル層とする電界効果トランジスタ及びその製造方法と、これを利用したメモリ素子 (2010)
  • Inventor(s): 山田浩之、向平華、澤彰仁、井上公、佐藤弘、浅沼周太郎、赤穗博司
  • Industrial Property Rights Holder: 独立行政法人産業技術総合研究所
  • Industrial Property Number: 特許、特願2010-264199
  • Filing Date: 2010-11-16
• [Patent(Industrial Property Rights)] ペロブスカイト型の複合酸化物をチャンネル層とする電界効果トランジスタ及びその製造方法と、これを利用したメモリ素子 (2010)
  • Inventor(s): 澤彰仁、浅沼周太郎、井上公、佐藤弘、赤穗博司、山田浩之、岩佐義宏
  • Industrial Property Rights Holder: 独立行政法人産業技術総合研究所
  • Patent Publication Number: 特許、特開2011-243632
  • Filing Date: 2010-05-14