2011 Fiscal Year Final Research Report
High performance of eco-friendly magnesium system thermoelectric material by the controlled defect and composition.
| Project/Area Number |
21560732
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Structural/Functional materials
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| Research Institution | National Institute for Materials Science |
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Principal Investigator |
ISODA Yukihiro 独立行政法人物質・材料研究機構, 電池材料ユニット, 主任研究員 (80354140)
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| Project Period (FY) |
2009 – 2011
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| Keywords | Mg2SiSn / 格子欠損 / 格子間原子 / 熱電特性 / 伝導型制御 / キャリア濃度 |
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| Research Abstract |
Mg_2SiSn system thermoelectric semiconductor, which introduced the schottky defect or the Fraenkel defect, changed the conduction type by those defects. Those causes were 1) an electron as a donor was produced by the Fraenkel defect of Mg atom, 2) a hole as an acceptor was produced by the schottky defect of the interstitial Mg atom.
The electron concentration of Mg2SiSn with the grain boundary defect was decreased remarkably, this is, the electronic trap-level was formed by the grain boundary defect. Therefore, a hole became dominant and p-type conduction was shown.
The controlling of carrier concentration by these defects was possible.
The performance of p-type Mg2SiSn by the controlling of defect and composition was improved about 3 times.
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