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2011 Fiscal Year Final Research Report

Development of spin-function on flexible semiconductors

Research Project

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Project/Area Number 21656005
Research Category

Grant-in-Aid for Challenging Exploratory Research

Allocation TypeSingle-year Grants
Research Field Applied materials science/Crystal engineering
Research InstitutionKyushu University

Principal Investigator

MIYAO Masanobu  九州大学, 大学院・システム情報科学研究院, 特任教授 (60315132)

Co-Investigator(Kenkyū-buntansha) SADOH Taizoh  九州大学, 大学院・システム情報科学研究院, 准教授 (20274491)
Project Period (FY) 2009 – 2011
Keywordsフレキシブル / スピントランジスタ
Research Abstract

To achieve spin-function on flexible semiconductors, a new low-temperature(. 350oC) crystallization technique of SiGe has been developed. Moreover, magnetic and electronic properties of ferromagnetic Heusler alloy/SiGe stacked structures have been clarified.

  • Research Products

    (26 results)

All 2012 2011 2010 2009

All Journal Article (11 results) (of which Peer Reviewed: 11 results) Presentation (15 results)

  • [Journal Article] "Low temperature(1~ 250oC) layer exchange crystallization of Si1? xGex(x=1? 0) on insulator for advanced flexible devices2012

    • Author(s)
      Jong-Hyeok Park, M. Kurosawa, N. Kawabata, M. Miyao, and T. Sadoh
    • Journal Title

      Thin Solid Films

      Volume: Vol.520 Pages: 3293-3295

    • Peer Reviewed
  • [Journal Article] Au-Induced Low-Temperature(~ 250oC) Crystallization of Si on Insulator Through Layer-Exchange Process2011

    • Author(s)
      Jong-Hyeok Park, M. Kurosawa, N. Kawabata, M. Miyao, and T. Sadoh
    • Journal Title

      Electrochemical and Solid-State Letters

      Volume: Vol.14, No.6 Pages: 232-234

    • Peer Reviewed
  • [Journal Article] Low-Temperature(~ 250oC) Cu-Induced Lateral Crystallization of Amorphous Ge on Insulator2011

    • Author(s)
      T. Sadoh, M. Kurosawa, T. Hagihara, K. Toko, and M. Miyao
    • Journal Title

      Electrochemical and Solid-State Letters

      Volume: Vol.14, No.7 Pages: 274-276

    • Peer Reviewed
  • [Journal Article] Au-Catalyst Induced Low Temperature(~ 250oC) Layer Exchange Crystallization for SiGe On Insulator2011

    • Author(s)
      J.-H. Park, M. Kurosawa, N. Kawabata, M. Miyao, and T. Sadoh
    • Journal Title

      ECS Transactions

      Pages: 39-42

    • Peer Reviewed
  • [Journal Article] Low-temperature(. 250oC) crystallization of Si on insulating substrate by gold-induced layer-exchange technique2010

    • Author(s)
      J.-H. Park, M. Kurosawa, N. Kawabata, M. Miyao, and T. Sadoh
    • Journal Title

      Proceedings of TENCON 2010-2010 IEEE Region 10 Conference

      Pages: 2196-2198

    • Peer Reviewed
  • [Journal Article] "Highly ordered Co2FeSi Heusler alloys grown on Ge(111) by low-temperature molecular beam epitaxy2010

    • Author(s)
      K. Kasahara, K. Yamamoto, S. Yamada, T. Murakami, K. Hamaya, K. Mibu, and M. Miyao
    • Journal Title

      J. Appl. Phys

      Volume: Vol.107, No.9 Pages: 105-1-3

    • Peer Reviewed
  • [Journal Article] Comparison of Nonlocal and Local Magnetoresistance Signals in Laterally Fabricated Fe3Si/Si Spin-Valve Devices2010

    • Author(s)
      Y. Ando, K. Kasahara, K. Yamane, K. Hamaya, K. Sawano, T. Kimura, and M. Miyao
    • Journal Title

      Appl. Phys. Express

      Volume: Vol.3, No Pages: 093001-1-3

    • Peer Reviewed
  • [Journal Article] High-quality epitaxial CoFe/Si(111) heterostructures fabricated by low-temperature molecular beam epitaxy2010

    • Author(s)
      Y. Maeda, K. Hamaya, S. Yamada, Y. Ando, K. Yamane, and M. Miyao
    • Journal Title

      Appl. Phys. Lett

      Volume: Vol.97, No.19 Pages: 192501-1-3

    • Peer Reviewed
  • [Journal Article] Electrical injection and detection of spin-polarized electrons in silicon through an Fe3Si/Si Schottky tunnel barrier2009

    • Author(s)
      Y. Ando, K. Hamaya, K. Kasahara, Y. Kishi, K. Ueda, K. Sawano, T. Sadoh, and M. Miyao
    • Journal Title

      Appl. Phys. Lett

      Volume: Vol.94, No.18 Pages: 182105-1-3

    • Peer Reviewed
  • [Journal Article] Ferromagnetism and Electronic Structures of Nonstoichiometric Heusler-Alloy Fe3-xMnxSi Epilayers Grown on Ge(111)2009

    • Author(s)
      K. Hamaya, H. Itoh, O. Nakatsuka, K. Ueda, K. Yamamoto, M. Itakura, T. Taniyama, T. Ono, and M. Miyao
    • Journal Title

      Phys. Rev. Lett

      Volume: Vol.102, No.13 Pages: 137204-1-4

    • Peer Reviewed
  • [Journal Article] "Magnetic properties of epitaxially grown Fe3Si/Ge(111) layers with atomically flat heterointerfaces2009

    • Author(s)
      Y. Ando, K. Hamaya, K. Kasahara, K. Ueda, Y. Nozaki, T. Sadoh, Y. Maeda, . K. Matsuyama, and M. Miyao
    • Journal Title

      J. Appl. Phys

      Volume: Vol.105, No.7 Pages: 07B102-1-3

    • Peer Reviewed
  • [Presentation] A u誘起層交換成長法による大粒径G e(1 1 1)結晶/絶縁膜の形成:界面酸化膜挿入効果2012

    • Author(s)
      朴鍾.,鈴木恒晴,黒澤昌志,宮尾正信,佐道泰造
    • Organizer
      2012年春季第59回応用物理学関係連合講演会
    • Place of Presentation
      東京
    • Year and Date
      20120611-05
  • [Presentation] "Lateral-liquid phase epitaxy of(101) Ge-on-insulator from Si template by metal-induced crystallization2011

    • Author(s)
      M. Kurosawa, N. Kawabata, R. Kato, T. Sadoh, and M. Miyao
    • Organizer
      219th ECS Meeting, The Electrochemical Society, Montreal
    • Place of Presentation
      Canada
    • Year and Date
      20110000
  • [Presentation] Au-catalyst Induced Low Temperature(~ 250oC) Layer Exchange Crystallization for SiGe On Insulator2011

    • Author(s)
      J. Park, M. Kurosawa, N. Kawabata, M. Miyao, and T. Sadoh
    • Organizer
      219th ECS Meeting, The Electrochemical Society, Montreal
    • Place of Presentation
      Canada
    • Year and Date
      20110000
  • [Presentation] Low-Temperature Formation of(111) Si1-xGex(0<x<1) on Insulator by Al-Induced Crystallization2011

    • Author(s)
      M. Kurosawa, T. Sadoh, and M. Miyao
    • Organizer
      AWAD2011, 2011 Asia Pacific Workshop on Fundametals and Applications of advanced semiconductor devices
    • Place of Presentation
      Daejeon, Korea
    • Year and Date
      20110000
  • [Presentation] Low-temperature(~ 250oC) Crystallization of Poly-SiGe Films by Gold-Induced Layer-Exchange Technique for Flexible Electronics2011

    • Author(s)
      J.-H. Park, M. Kurosawa, N. Kawabata, M. Miyao, T. Sadoh
    • Organizer
      AWAD2011, 2011 Asia Pacific Workshop on Fundametals and Applications of advanced semiconductor devices
    • Place of Presentation
      Daejeon, Korea
    • Year and Date
      20110000
  • [Presentation] "Single-crystalline(110)-oriented Ge strips on insulating substrates by SiGe-mixing triggered rapid-melting-growth from artificial Si-micro-seeds2011

    • Author(s)
      M. Kurosawa, N. Kawabata, R. Kato, T. Sadoh and M. Miyao
    • Place of Presentation
      Leuven, Belgium
    • Year and Date
      20110000
  • [Presentation] Low Temperature(~ 250oC) Layer Exchange Crystallization of Si1-xGex(x=1-0) on Insulator for Advanced Flexible Devices2011

    • Author(s)
      Jong-Hyeok Park, M. Kurosawa, N. Kawabata, M. Miyao, and T. Sadoh
    • Place of Presentation
      Leuven, Belgium
    • Year and Date
      20110000
  • [Presentation] 次世代フレキシブルデバイスの為の多結晶Si1-xGex(x=0-1)/絶縁膜の極低温層交換成長(~ 250oC)2011

    • Author(s)
      朴鍾.,黒澤昌志,川畑直之,宮尾正信,佐道泰造
    • Organizer
      2011年春季第58回応用物理学関係連合講演会
    • Place of Presentation
      川工科大学
    • Year and Date
      20110000
  • [Presentation] フレキシブルデバイス実現に向けたSi及びGe結晶/絶縁膜の極低温成長(~ 250oC)2011

    • Author(s)
      佐道泰造,黒澤昌志,川畑直之,朴鍾.,都甲薫,宮尾正信
    • Organizer
      2011年春季第58回応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学
    • Year and Date
      20110000
  • [Presentation] "Low-temperature(. 250oC) crystallization of Si on insulating substrate by gold-induced layer-exchange technique2010

    • Author(s)
      J. Park, M. Kurosawa, N. Kawabata, M. Miyao, and T. Sadoh
    • Place of Presentation
      Fukuoka
    • Year and Date
      20100000
  • [Presentation] Gold-Induced Crystallization of Si at Low-Temperature(. 250oC) for Flexible Electronics2010

    • Author(s)
      J.-H. Park, M. Kurosawa, N. Kawabata, M. Miyao, and T. Sadoh
    • Organizer
      Nanotech Malaysia 2010 : Conference on Enabling Science and Nanotechnology
    • Place of Presentation
      Kuala Lumpur, Malaysia
    • Year and Date
      20100000
  • [Presentation] Al誘起層交換法によるSiGe結晶の配向成長機構2010

    • Author(s)
      川畑直之,黒澤昌志,朴鍾.,佐道泰造,宮尾正信
    • Organizer
      2010年秋季第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学
    • Year and Date
      20100000
  • [Presentation] Au誘起層交換成長法による多結晶Si/絶縁膜の極低温形成(~ 250oC)2010

    • Author(s)
      朴鍾.,黒澤昌志,川畑直之,宮尾正信,佐道泰造
    • Organizer
      2010年秋季第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学
    • Year and Date
      20100000
  • [Presentation] Low-temperature Epitaxial Growth of Ferromagnetic Silicide for SiGe Based Spintransistors2010

    • Author(s)
      M. Miyao, K. Hamaya
    • Place of Presentation
      Tokyo
    • Year and Date
      2010-06-30
  • [Presentation] Atomically Controlled Epitaxial Growth of Ferromagnetic Heusler Alloys for SiGe Based Spintronics2009

    • Author(s)
      M. Miyao, K. Hamaya, K. Kasahara, S. Yamada and K. Sawano
    • Place of Presentation
      Spain
    • Year and Date
      20090000

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Published: 2013-07-31  

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