2011 Fiscal Year Final Research Report
Dislocation-less heteroepitaxy by control of lattice mismatch strain using arranged elastically-strain-relaxed nanodots
| Project/Area Number |
21686006
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| Research Category |
Grant-in-Aid for Young Scientists (A)
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| Allocation Type | Single-year Grants |
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| Research Field |
Thin film/Surface and interfacial physical properties
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| Research Institution | Osaka University |
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Principal Investigator |
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| Project Period (FY) |
2009 – 2011
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| Keywords | 薄膜 / ナノドット |
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| Research Abstract |
Self-organization technique of Ge nanodots epitaxially grown on Si substrates was developed. Using nanodots formed by ultrathin SiO_2 film technique as seed crystals, we developed epitaxial growth technique of films with ultrasmall amount of dislocations on Si substrates, which we call as nanocontact epitaxy. We formed epitaxial growth of Ge and GaSb films on Si substrates. Ge films on Si(001) substrates formed by nanocontact epitaxy, which were as thin as 100 nm, had surface roughness of～0. 4 nm, etch pit density of 10^4-10^5cm^<-2>, namely, high quality. In these Ge epitaxial films, lattice mismatch strain was almost completely relaxed due to the elastically-strain-relaxed nanodots which were seed crystals, despite the ultrasmall amount of dislocations.
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