2011 Fiscal Year Final Research Report
Defect control in p-type oxide semiconductor for device application
| Project/Area Number |
21686061
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| Research Category |
Grant-in-Aid for Young Scientists (A)
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| Allocation Type | Single-year Grants |
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| Research Field |
Inorganic materials/Physical properties
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| Research Institution | University of Yamanashi |
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Principal Investigator |
YANAGI Hiroshi 山梨大学, 大学院・医学工学総合研究部, 准教授 (30361794)
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| Project Period (FY) |
2009 – 2011
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| Keywords | p型酸化物半導体 / 価数制御 / 界面制御 |
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| Research Abstract |
Cu valency at the Cu_2O film surface and Cu_2O/Al_2O_x interface were studied by X-ray photoelectron spectroscopy. We revealed that Cu valency at the interfaces is always Cu^<2+> and this result was not affected by deposition order. We also revealed that vacuum annealing was effective to reduce Cu^<2+> to Cu^+at the interface, but it does not work when thick film was deposited on the interface.
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