2011 Fiscal Year Final Research Report
Research on nano wire phase-change memory
| Project/Area Number |
21710135
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
Microdevices/Nanodevices
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| Research Institution | Gunma University |
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Principal Investigator |
YIN You 群馬大学, 大学院・工学研究科, 助教 (10520124)
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| Project Period (FY) |
2009 – 2011
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| Keywords | 相変化メモリ / 微細化 / 低消費電力 |
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| Research Abstract |
In this work, we fabricated the nanowire phase-change memories with two methods :(1)EBL using the positive resist ZEP-520A followed by phase-change material deposition and lift-off processes,(2)EBL using the negative resist hydrogen silsesquioxane(HSQ)followed by reactive ion etching(RIE)after phase-change material deposition. We also demonstrated the fabrication and phase change memory performance of a conical TiN/Ge2Sb2Te5(GST)/TiN nanoarray(aerial array density : 207 Gbit inch2)prepared via block copolymer lithography and straightforward two-step etching. This work provides a significant step for low power consumption and ultra-high density storage based on phase change materials
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[Journal Article] Large-Area2012
Author(s)
J. Yoon, H. Jeong, S. Hong, Y. Yin, H. Moon, S. Jeong, J. Han, Y. Kim, Y. Kim, Heon Lee, S Kim, J. Lee
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Journal Title
Scalable Fabrication of Conical TiN/GST/TiN Nanoarray for Low-Power Phase Change Memory Journal of Materials Chemistry
Volume: 22
Pages: 1347-1351
Peer Reviewed
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