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2011 Fiscal Year Final Research Report

Superlattice semiconductor photocathode for the electron beam source with a high brightness and a long NEA-surface lifetime.

Research Project

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Project/Area Number 21740305
Research Category

Grant-in-Aid for Young Scientists (B)

Allocation TypeSingle-year Grants
Research Field Atomic/Molecular/Quantum electronics
Research InstitutionThe Institute of Physical and Chemical Research

Principal Investigator

NISHITANI Tomohiro  独立行政法人理化学研究所, 延與放射線研究室, 客員研究員 (40391320)

Project Period (FY) 2009 – 2011
Keywordsフォトカソード / 高輝度電子源 / ガリウムヒ素半導体 / 超格子半導体 / 負電子親和力表面 / 長寿命化 / 高耐久化
Research Abstract

The aim of this study is the realization of the novel electron source using a semiconductor photocathode with high brightness and long NEA-surface-lifetime. This study found that the quantum confinement effect in a superlattice structure has the advantage of small energy spread of extracted electrons and the semiconductor which has small electron affinity and large band-gap energy had the advantage of long NEA-surface-lifetime. The p-GaN photocathode with a bulk structure for the long NEA-surface-lifetime and the InGaN-GaN superlattice photocathode for the generation of photoelectrons with small energy spread ware developed. As a successful result, the p-GaN photocathode achieved ten times longer lifetime than the GaAs photocathode with a bulk structure known as the conventional photocathode and the effective quantum confinement effect was observed by the quantum yield spectrum of the InGaN-GaN superlattice photocathode.

  • Research Products

    (13 results)

All 2011 2010 2009 Other

All Journal Article (6 results) (of which Peer Reviewed: 5 results) Presentation (6 results) Patent(Industrial Property Rights) (1 results) (of which Overseas: 1 results)

  • [Journal Article] Superlattice Photocathode for High Brightness and Long NEA-surface lifetime2011

    • Author(s)
      T. Nishitani, M. Tabuchi, K. Motoki, T. Takashima, A. Era, Y. Takeda
    • Journal Title

      Journal of Physics : Conference Series

      Volume: 298 Pages: 012010, 1-5

    • DOI

      doi:10.1088/1742-6596/298/1/012010

    • Peer Reviewed
  • [Journal Article] A study on XAFS analysis of Cs/GaAs NEA surface2011

    • Author(s)
      Atsushi Era, Masao Tabuchi, Tomohiro Nishitani, and Yoshikazu Takeda
    • Journal Title

      Journal of Physics : Conference Series

      Volume: 298 Pages: 012012, 1-5

    • DOI

      doi:10.1088/1742-6596/298/1/012012

    • Peer Reviewed
  • [Journal Article] A study of an electron affinity of cesium telluride thin film2011

    • Author(s)
      H Sugiyama, K Ogawa, J Azuma, K Takahashi, M Kamada, T Nishitani, M Tabuchi, T Motoki, K Takashima, A Era and Y Takeda
    • Journal Title

      Journal of Physics : Conference Series

      Volume: 298 Pages: 012014, 1-6

    • DOI

      doi:10.1088/1742-6596/298/1/012014

    • Peer Reviewed
  • [Journal Article] High Brightness Spin-Polarized Electron Source using Semiconductor Photocathodes2009

    • Author(s)
      Tomohiro Nishitani, Masao Tabuchi, Yoshikazu Takeda, Yuji Suzuki, Kazuya Motoki, Takashi Meguro
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 48

    • DOI

      DOI:10.1143/JJAP.48.06FF02

  • [Journal Article] Superlattice Photocathode With High Brightness And Long NEA-surface Lifetime2009

    • Author(s)
      Tomohiro Nishitani, Masao Tabuchi, Yoshikazu Takeda, Yuji Suzuki, Kazuya Motoki, Takashi Meguro
    • Journal Title

      The American Institute of Physics : Conference Proceedings

      Volume: Volume1149 Pages: 1047-1051

    • DOI

      DOI:10.1063/1.3215590

    • Peer Reviewed
  • [Journal Article] Quantum yield degradation from extraction of photocurrent and residual gas in a p-GaN photocathode with an NEA surface Kazuya Hayase

    • Author(s)
      Tomohiro Nishitani, Takashi Meguro
    • Journal Title

      The Electronic Journal Edition of IEEJ Transactions

    • Peer Reviewed
  • [Presentation] 高耐久・高輝度AlGaAs-GaAs超格子フォトカソードの開発2010

    • Author(s)
      西谷智博
    • Organizer
      第4回フォトカソード研究会
    • Place of Presentation
      広島県東広島市
    • Year and Date
      2010-11-12
  • [Presentation] 超格子半導体フォトカソードを用いたパルス電子ビーム源の開発2010

    • Author(s)
      西谷智博
    • Organizer
      第66回日本顕微鏡学会学術講演会
    • Place of Presentation
      愛知県名古屋市
    • Year and Date
      2010-05-23
  • [Presentation] 負電子親和力表面を持つ半導体フォトカソードの半導体材料と電子源装置の開発2009

    • Author(s)
      西谷智博
    • Organizer
      第3回フォトカソード研究会
    • Place of Presentation
      愛知県名古屋大学
    • Year and Date
      20091001-02
  • [Presentation] High brightness electron source for pulse electron gun using semiconductor photocathodes with NEA surface2009

    • Author(s)
      Tomohiro Nishitani, Masao Tabuchi, Yoshikazu Takeda, Kazuya Motoki, Kento Takashima
    • Organizer
      The Twelfth Frontiers of Electron Microscopy in Materials Science(FEMMS2009)
    • Place of Presentation
      Sasebo, Japan
    • Year and Date
      20090927-1002
  • [Presentation] Development of Pulse Electron Gun with High Brightness Electron Source Using Superlattice Photocathode2009

    • Author(s)
      Tomohiro Nishitani, Masao Tabuchi, Yoshikazu Takeda, Yuji Suzuki, Kazuya Motoki and Takashi Meguro
    • Organizer
      OIST Workshop,"Fundamentals of Quantum Mechanics and Its Applications"
    • Place of Presentation
      Okinawa, Japan
    • Year and Date
      20090513-15
  • [Presentation] 負電子親和力表面の半導体を用いた30keVフォトカソード電子銃の開発2009

    • Author(s)
      西谷智博,田渕雅夫,竹田美和,鈴木祐史,元木和也
    • Organizer
      日本顕微鏡学会第64回学術講演会
    • Place of Presentation
      宮城県仙台国際センター
    • Year and Date
      2009-05-26
  • [Patent(Industrial Property Rights)] PHOTOCATHODE SIMICONDUCTOR DEVICE2010

    • Inventor(s)
      西谷智博
    • Industrial Property Rights Holder
      独立行政法人理化学研究所
    • Industrial Property Number
      US Patent Application、2010/0108983 A1
    • Acquisition Date
      2010-05-06
    • Overseas

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Published: 2013-07-31  

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