2011 Fiscal Year Final Research Report
Superlattice semiconductor photocathode for the electron beam source with a high brightness and a long NEA-surface lifetime.
| Project/Area Number |
21740305
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
Atomic/Molecular/Quantum electronics
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| Research Institution | The Institute of Physical and Chemical Research |
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Principal Investigator |
NISHITANI Tomohiro 独立行政法人理化学研究所, 延與放射線研究室, 客員研究員 (40391320)
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| Project Period (FY) |
2009 – 2011
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| Keywords | フォトカソード / 高輝度電子源 / ガリウムヒ素半導体 / 超格子半導体 / 負電子親和力表面 / 長寿命化 / 高耐久化 |
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| Research Abstract |
The aim of this study is the realization of the novel electron source using a semiconductor photocathode with high brightness and long NEA-surface-lifetime. This study found that the quantum confinement effect in a superlattice structure has the advantage of small energy spread of extracted electrons and the semiconductor which has small electron affinity and large band-gap energy had the advantage of long NEA-surface-lifetime. The p-GaN photocathode with a bulk structure for the long NEA-surface-lifetime and the InGaN-GaN superlattice photocathode for the generation of photoelectrons with small energy spread ware developed. As a successful result, the p-GaN photocathode achieved ten times longer lifetime than the GaAs photocathode with a bulk structure known as the conventional photocathode and the effective quantum confinement effect was observed by the quantum yield spectrum of the InGaN-GaN superlattice photocathode.
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Research Products
(13 results)
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[Journal Article] A study of an electron affinity of cesium telluride thin film2011
Author(s)
H Sugiyama, K Ogawa, J Azuma, K Takahashi, M Kamada, T Nishitani, M Tabuchi, T Motoki, K Takashima, A Era and Y Takeda
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Journal Title
Journal of Physics : Conference Series
Volume: 298
Pages: 012014, 1-6
DOI
Peer Reviewed
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