2010 Fiscal Year Final Research Report
Synthesis of boron doped diamond under high pressure environment
| Project/Area Number |
21750156
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
Functional materials chemistry
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| Research Institution | National Institute for Materials Science |
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Principal Investigator |
KAWASHIMA Tetsuya National Institute for Materials Science, 超伝導材料センター, 主任研究員 (00354308)
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| Project Period (FY) |
2009 – 2010
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| Keywords | ダイヤモンド / 超伝導 / 高圧合成 |
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| Research Abstract |
In this study, we adopted the new high-pressure synthetic technique, which carbonate is used as diamond producing catalysts, and achieved to prepare the boron doped superconducting diamond crystal under lower P-T condition reported before. Our sample showed maximum superconducting transition temperature (T_c) at 10.3 K, which is the highest T_c ever reported about high-pressure synthetic diamond.
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Research Products
(3 results)
