2010 Fiscal Year Final Research Report
Study of large magnetoresistance effect in quantum cross devices
Project/Area Number |
21760001
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Research Category |
Grant-in-Aid for Young Scientists (B)
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Allocation Type | Single-year Grants |
Research Field |
Applied materials science/Crystal engineering
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Research Institution | Hokkaido University |
Principal Investigator |
KAIJU Hideo Hokkaido University, 電子科学研究所, 助教 (70396323)
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Project Period (FY) |
2009 – 2010
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Keywords | スピントロニクス / 磁気抵抗効果 / ナノ接合 / 有機膜 / 強磁性体 / 表面・界面状態 / 磁化状態 / 電流電圧特性 |
Research Abstract |
In this study, we have proposed quantum cross devices, which consist of organic molecules sandwiched between two ferromagnetic metals whose edges are crossed, and investigated their surface and interfacial structures, electrical characteristics, and magnetic properties. From the viewpoint of surface structures, magnetic properties, and edge states, Co/SiO2 is found to be the best materials for electrodes in quantum cross devices. As a result of the fabrication of Co/molecules/Co quantum cross devices, interesting switching properties have been successfully observed at room temperature.
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[Presentation] Fabrication and Evaluation of Ni/P3HT : PCBM/Ni Nanoscale Junctions2010
Author(s)
H.Kaiju, K.Kondo, N.Basheer, N.Kawaguchi, S.White, A.Hirata, M.Ishimaru, Y.Hirotsu, A.Ishibashi
Organizer
International Symposium on Joint Research Network for Advanced Material and Devices, pp.113-114, P-32
Place of Presentation
Tomakomai, Japan
Year and Date
2010-03-25
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[Patent(Industrial Property Rights)] Nickel Thin Film, Method for Formation of the Nickel Thin Film, Ferromagnetic Nano-Junction Device, Method for roducing the Ferromagnetic Nano-Junction Device, Thin Metallic Wire, and Method for Formation of the Thin Metallic Wire2008
Inventor(s)
H.Kaiju, M.Ishimaru, Y.Hirotsu, A.Ono, A.Ishibashi
Industrial Property Rights Holder
北海道大学
Industrial Property Number
特許,US-2010-0266868
Filing Date
2008-08-28
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